Large-Signal Modeling of High-Voltage GaAs Power HBTs (original) (raw)

New GaInP/GaAS-HBT Large-Signal Model for Power Applications

28th European Microwave Conference, 1998, 1998

A new GaInP/GaAs HBT model for power applications is presented. It is based on the GUMMEL-POON model. Additionally, it accounts for the increase of the thermal resistance at high temperatures and the high collector-current base push-out effect. The model is validated for GaInP/GaAs HBTs.

An Electrothermal Model for GaInP/GaAs Power HBTs with Enhanced Convergence Capabilities

2006 European Microwave Integrated Circuits Conference, 2006

A new model for GaInP/GaAs power heterojunction bipolar transistors (HBT) is proposed. This non-linear electrothermal and fully scalable model was designed with closed-form equations in order to reduce simulation times in complex circuits like High Power Amplifiers (HPA) and to have good convergence capabilities at high compression levels. This paper presents model topology and shows parameters extraction from pulsed I-V, pulsed [SI-parameters measurements.

High-voltage GaAs power-HBTs for base-station amplifiers

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2001

Base stations require high-power devices operating at bias voltages around 26 V. This paper reports on GaAs HBTs with increased breakdown voltage. Transistors on unthinned wafers deliver 3.2 W at 2 GHz for 27 V bias. 100 Ohms output impedance and 74% PAE make them very attractive for base-station amplifiers.

28V High-Linearity and Rugged InGaP/GaAs Power HBT

2006 IEEE MTT-S International Microwave Symposium Digest, 2006

This paper reports on the improvement of a previously developed InGaP/GaAs HBT for 24-28V linear power operation. The improvements achieved were: application of dynamic bias circuit which improves the ACLR under WCDMA modulation; modification of device technology improving ruggedness to sustain 10:1 VSWR at 30V collector bias under P1dB driving conditions and over 6 dB of gain compression; maintenance of lifetime and reliability simultaneously. Building blocks of HBT were strung together for higher power and good scaling of performance was achieved supporting the validity of the layout approach and the thermal design. Devices delivering P1dB = 8W under CW conditions provided ACLR =-50 dBc at 8.5 dB back-off and 16% efficiency for WCDMA signal (PAR=8.7 dB) at 2.14 GHz. Lifetime test over 3000 hours was repeated for 28V bias and 0.05mA/um current density at 315 degree C junction temperature. Therefore, the InGaP/GaAs HBT technology is mature now for the high linearity power amplification.

An accurate and compact large signal model for III–V HBT devices

Solid-State Electronics, 2005

An accurate and compact large signal model is proposed for modeling heterojunction bipolar transistors (HBTs) based on III-V materials. In DC mode, the model includes self-heating, Kirk and Early effects, as well as the temperature dependence of the model parameters. In small signal mode, the model captures the variation of various AC parameters with bias. The procedure of extracting the model parameters uses DC and multiple bias S-parameter measurements. The model is compiled in the HP-ADS circuit simulator as user-compiled model and is verified by comparing its simulations to measurements in all modes of operation for an AlGaAs/GaAs transistor with an emitter area of 2 · 25 lm 2 .

Development of High-Gain and High-Efficiency InGaP/GaAs HBT for High-Voltage Operation

A high-gain and high-efficiency InGaP/GaAs HBT for high voltage operation has been developed. Saturated Pout of > 33dBm, peak PAE of > 70% and linear gain of > 22dB have been obtained for a 2 watt device at 0.9GHz and 2GHz. The device shows high burnout voltage at 10V operation and very high reliability for infrastructure applications.

High linearity 40 watt, 28V InGaP/GaAs HBT

… Digest, 2008

This paper reports on a 40W high linearity InGaPI GaAs 28V HBT. It uses a high breakdown voltage, high ruggedness HBT process developed by WJ. The device employs a dynamic bias circuit to improve ACLR unde~WCDMA modulation conditions. The P-l dB of the device reaches 46dBm (40W), with a gain around 14.5dB. With WCDMA one carrier modulation (PAR=8.5dBc), the device achieves an ACLR of-50dBC and an efficiency of 19.5% at an output power of 37.5dBm (5.6W) at 920-960MHz frequency band. Without the help of a DPD, the performance of this device will make it an excellent choice for base station and repeater applications.

Development of High Breakdown Voltage InGaP/GaAs DHBTs

In this paper, we report the development of a high breakdown voltage InGaP/GaAs HBT process for low-to-mid power and high-voltage power amplifier operation. To achieve the high-breakdown InGaP HBT, two different collector designs and collector-etch processes were investigated. The first device process approach uses a thick GaAs collector with low ndoping. The process challenges and considerations of this long collector approach are briefly discussed. An alternative approach uses wide band gap InGaP material as part of the collector design. High breakdown voltage can be obtained from both material design approaches. However, to fully leverage the existing process modules of our high volume HBT production line and allow the re-use of our current HBT design rules and libraries, our high voltage HBT (HV-HBT) development efforts focus on HBTs with InGaP in the collector (either composite collector, CCHBT, or double heterojunctions, DHBTs). Using a slightly modified process, InGaP DHBT devices have been demonstrated with BV ceo and BV cbo values of 40 V and 56 V, respectively. A cut off frequency, f t , of 40 GHz has also been obtained at a current density of Jc=0.3 mA/µm 2 by using this process.

Large signal modelling of GaAs/AlGaAs HBT's with separation of the surface recombination current

Solid-State Electronics, 1999

The eects of surface recombination on an AlGaAs/GaAs HBT have been investigated. Studies of Gummel-plots for devices with dierent sized base emitter junctions made it possible to separate the surface recombination from the bulk current. An extension of the Gummel±Poon model that includes this surface recombination current is suggested. The large-signal performance was evaluated by two methods, power spectrum characteristics and by design and characterization of a power ampli®er. For these two measurement set-ups, measured data was compared with simulations of the model both including and excluding the surface recombination current. It is clearly seen that without including the surface recombination current, it is impossible to correctly represent the large-signal performance. The model is also veri®ed with DC characteristics and S-parameters. #

Scalable GaInP/GaAs HBT large-signal model

IEEE Transactions on Microwave Theory and Techniques, 2000

A scalable large-signal model for heterojunction bipolar transistors (HBTs) is presented in this paper. It allows exact modeling of all transistor parameters from single-finger elementary cells to multifinger power devices. The scaling rules are given in detail. The model includes a new collector description, which accounts for modulation of base-collector capacitance Cjc as well as for base and collector transit