Results of irradiation tests on standard planar silicon detectors with 7– protons (original) (raw)

Results of irradiation tests on standard planar silicon detectors with 7– protons

2002, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24GeV/c and 10MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of

The phenomenological model developed by the authors in previous papers is used to evaluate the degradation induced in high resistivity silicon detectors by pion and proton irradiation at the future accelerator facilities or by cosmic protons considering the continuous irradiation for ten years of work. The equations governing the degradation of the semiconductor lattice are explicitly considered. The damage is analysed at the microscopic level (defects production and their evolution toward equilibrium) and at the macroscopic level (the changes in the leakage current of the p -n junction). The rates of production of primary defects, as well as their evolution toward equilibrium are evaluated considering e xplicitly the irradiation filed characterising the specified applications, i.e. the type of the projectile particle and its energy. The influence of these defects on the leakage current density is compared with experimental data from the literature, and predictions for the LHC radia...