Proton irradiation of silicon detectors with different resistivities (original) (raw)
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The phenomenological model developed by the authors in previous papers is used to evaluate the degradation induced in high resistivity silicon detectors by pion and proton irradiation at the future accelerator facilities or by cosmic protons considering the continuous irradiation for ten years of work. The equations governing the degradation of the semiconductor lattice are explicitly considered. The damage is analysed at the microscopic level (defects production and their evolution toward equilibrium) and at the macroscopic level (the changes in the leakage current of the p -n junction). The rates of production of primary defects, as well as their evolution toward equilibrium are evaluated considering e xplicitly the irradiation filed characterising the specified applications, i.e. the type of the projectile particle and its energy. The influence of these defects on the leakage current density is compared with experimental data from the literature, and predictions for the LHC radia...
Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation
The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full understanding of differences found between proton and neutron induced damage, process related effects changing the radiation tolerance in addition to the oxygen content and the lack of understanding the changed detector properties on the basis of damage induced point and cluster defects. In addition to float zone silicon, so far entirely used for detector fabrication,Czochralski silicon was also stu...
Czochralski silicon detectors irradiated with and 10MeV protons
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2006
We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24GeV/c and 10MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of