Relation between microscopic defects and macroscopic changes in silicon detector properties after hadron irradiation (original) (raw)

Systematic Study Related to the Role of Initial Impurities and Irradiation Rates in the Formation and Evolution of Complex Defects in Silicon for Detectors in HEP Experiments*

IONEL LAZANU

Physica Scripta, 2004

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Long-term Damage Induced by Hadrons in Silicon Detectors for Uses at the LHC-accelerator and in Space Missions

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Characterization of thick epitaxial silicon detectors from different producers after proton irradiation

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Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration

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Observation of a bistable defect generated and activated by heat treatments in irradiated high resistivity silicon detectors

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Damage-induced surface effects in silicon detectors

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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1996

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Microscopic modelling of defects production and their annealing after irradiation in silicon for HEP particle detectors

IONEL LAZANU

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Estimated modifications of the characteristics of silicon detectors due to their use at the LHC-accelerator and in AMS space conditions

IONEL LAZANU

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Neutron induced defects in silicon detectors characterized by DLTS and TSC methods

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Correlation of Radiation Damage Effects in High Rsistivity Silicon

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Neutron irradiation effects on standard and oxygenated silicon diodes

Jeffery Wyss

2002

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Role of Oxygen and Carbon Impurities in the Radiation Resistance of Silicon Detectors

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Radiation hardness of silicon—a challenge for defect engineering

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100 MeV Si7+ Ion Irradiation Induced Modifications in Electrical Characteristics of Si Photo Detector: An In-Situ Reliability Study

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Electrical characteristics and charge collection efficiency of silicon detectors irradiated with very high neutron and proton fluences

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Experimental results on radiation induced bulk damage effects in float-zone and epitaxial silicon detectors

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Results of irradiation tests on standard planar silicon detectors with 7– protons

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Electrically active defects in p-type silicon after alpha-particle irradiation

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Study of charge transport in non-irradiated and irradiated silicon detectors

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Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

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IEEE Transactions on Nuclear Science, 1992

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Some recent results of the silicon detector radiation damage study by the RD2 collaboration

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Deep-level transient spectroscopy studies of silicon detectors after 24GeV proton irradiation and 1MeV neutron irradiation

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Time dependence of the behaviour of silicon detectors in intense radiation fields and the role of primary point defects

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Correlation between a deep hole trap and the reverse annealing effect in neutron-irradiated silicon detectors

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Radiation hardness of silicon detectors – a challenge from high-energy physics

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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999

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