High-performance SiGe pMODFETs grown by UHV-CVD (original) (raw)

The fabrication and characterization of 0.1 ym-gate-length SiGe pMODFETs fabricated on UHV-CVD-grown heterostructures with various novel layer structure configurations are reported. We have fabricated Ge/Sio,4Geo,6 pMODFETs with peak extrinsic transconductance (gmeXt) values as high as zyx 488 mS/mm at room temperature. These devices also displayed a unity current gain cutoff frequency ( f T ) of 42 GHz and maximum frequency of oscillation (f-) of 86 GHz. We have also investigated the performance of Sio.zGe~.~/Sio.,Geo.3 pMODFETs on silicon-on-sapphire (SOS) substrates. These devices exhibited dc transconductances as high as g,, = 377 mS/mm, and had values offr = 49 GHz and fm = 95 GHz. The first high-frequency noise characterization of SiGe MODFETs has also been performed. Sio.~Geo.~/Sio.6~Geo.3~ pMODFETs grown on high-p Si substrates produced minimum