High-performance SiGe pMODFETs grown by UHV-CVD (original) (raw)

2003

The high frequency and noise performances of n- and p-SiGe based MODFETs are reviewed. Their excellent HF and low noise behavior makes them well suited for RF mobile communications. We discuss their physical modeling, design optimization and self-heating effects.

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High-Performance SiGe MODFET Technology

MRS Proceedings, 2004

ABSTRACTAn overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO2 inversion layers. Next, previous results on high-performance n- and p-MODFETs fabricated at IBM and elsewhere are reviewed, followed by recent results on laterally-scaled Si/SiGe n-MODFETs with gate lengths as small as 70 nm. We conclude with a discussion of the materials issues for the future vertical and lateral scaling of SiGe MODFETs.

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Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies

Solid-state Electronics, 2004

The measured performance of sub-micron Si:SiGe Schottky gated HFETs is compared to Si nMOSFETs. To allow an up-to-date comparison between Si and strained-Si FETs, the different device types have been studied in their respective technologies. RF performance as given by the cut-off and maximum oscillation frequency is given as a function of input power. The evaluation highlights the current immaturity of the Si:SiGe technologies, where an average HFET shows a maximum transconductance of ∼300 mS/mm and cut-off frequency ∼60 GHz, while the new generation Si nMOS is reaching 1300 mS/mm and 120 GHz respectively. The comparison shows that the strength of the HFETs lies in low power operation (<200 μW).

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High-performance SiGe pMODFETs grown by UHV-CVD (original) (raw)

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