Radiation damage induced by 2 MeV protons in CdTe and CdZnTe semiconductor detectors (original) (raw)

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Irradiation-induced defects in CdTe and CdZnTe detectors Cover Page

Study of the Radiation Damage Induced by High Energy Gamma-Ray in CdTe Detectors

MRS Proceedings, 1997

In recent years the performance of room-temperature semiconductor detectors such as CdTe are improved and they are now suitable candidates for several applications. However, some key parameters that can severely affect such perfomances have not been measured yet. Thus we have studied the damaging of a set of CdTe detectors irradiated in a 60Co gamma-cell in a wide range of doses and dose-rates. A full characterization of the performance of irradiated detectors has been obtained by means of spectroscopic, electrostatic, photo-induced current transient spectroscopy and photo-deep level transient spectroscopy measurements to quote the energy resolution, the leakage current, the activation energy and capture cross-section of deep level defects, respectively.

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Study of the Radiation Damage Induced by High Energy Gamma-Ray in CdTe Detectors Cover Page

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Defective states induced in CdTe and CdZnTe detectors by high and low energy neutron irradiation Cover Page

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<title>The effects of proton-induced radiation damage on compound-semiconductor x-ray detectors</title> Cover Page

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Electronic properties of traps induced by γ-irradiation in CdTe and CdZnTe detectors Cover Page

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CdTe detectors' response to irradiation with high-energy gamma-rays Cover Page

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Orbit-Like Proton Radiation Sensitivity of CdTe Detectors: Evaluation of Mobility-Lifetime Products and Spectroscopic Properties Cover Page

Effects of electron irradiation on spectrometric properties of Schottky barrier CdTe radiation detectors

International Journal of Modern Physics: Conference Series

High detection efficiency and good room temperature performance of Schottky barrier CdTe semiconductor detectors make them well suited especially for X-ray and gamma-ray detectors. In this contribution, we studied the effect of electron irradiation on the spectrometric performance of the Schottky barrier CdTe detectors manufactured from the chips of size [Formula: see text] mm3 with In/Ti anode and Pt cathode electrodes (Acrorad Co., Ltd.). Electron irradiation of the detectors was performed by 5 MeV electrons at RT using a linear accelerator UELR 5-1S. Different accumulated doses from 0.5 kGy up to 1.25 kGy were applied and the consequent degradation of the spectrometric properties was evaluated by measuring the pulse-height gamma-spectra of [Formula: see text] radioisotope source. The spectra were collected at different reverse voltages from 300 V up to 500 V. The changes of selected significant parameters, like energy resolution, peak position, detection efficiency and leakage cu...

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Effects of electron irradiation on spectrometric properties of Schottky barrier CdTe radiation detectors Cover Page

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Deep Traps Induced by 700 keV Protons in CdTe and CdZnTe Detectors Cover Page

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Radiation effects on II–VI compound-based detectors Cover Page