Breakdown and low-temperature anomalous effects in 6H SiC JFETs (original) (raw)

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217), 1998

Abstract

Dipartimento di Elettronica e Informatica and INFM, University of Padova, via Gradenigo 6/A, 1-35 13 1 Padova, Italy, Tel. +39-049-8277658; Fax +39-49-8277699; e-mad: zanoni@dei.unipd.it ($) Dipartimento di Ingegneria dei Materiali, University of Trento, via ...

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