Recovery of radiation damage in CdTe and CdZnTe Detectors (original) (raw)

Study of the Radiation Damage Induced by High Energy Gamma-Ray in CdTe Detectors

MRS Proceedings, 1997

In recent years the performance of room-temperature semiconductor detectors such as CdTe are improved and they are now suitable candidates for several applications. However, some key parameters that can severely affect such perfomances have not been measured yet. Thus we have studied the damaging of a set of CdTe detectors irradiated in a 60Co gamma-cell in a wide range of doses and dose-rates. A full characterization of the performance of irradiated detectors has been obtained by means of spectroscopic, electrostatic, photo-induced current transient spectroscopy and photo-deep level transient spectroscopy measurements to quote the energy resolution, the leakage current, the activation energy and capture cross-section of deep level defects, respectively.