Atomic fluorine beam etching of silicon and related materials (original) (raw)
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Nanomaterials, 2020
In this paper, we study the plasma-less etching of crystalline silicon (c-Si) by F2/N2 gas mixture at moderately elevated temperatures. The etching is performed in an inline etching tool, which is specifically developed to lower costs for products needing a high volume manufacturing etching platform such as silicon photovoltaics. Specifically, the current study focuses on developing an effective front-side texturing process on Si(100) wafers. Statistical variation of the tool parameters is performed to achieve high etching rates and low surface reflection of the textured silicon surface. It is observed that the rate and anisotropy of the etching process are strongly defined by the interaction effects between process parameters such as substrate temperature, F2 concentration, and process duration. The etching forms features of sub-micron dimensions on c-Si surface. By maintaining the anisotropic nature of etching, weighted surface reflection (Rw) as low as Rw < 2% in Si(100) is ac...
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Very High Aspect Ratio Deep Reactive Ion Etching of Sub-micrometer Trenches in Silicon
2013
Abstract— This paper focuses on Deep Reactive Ion Etching (DRIE) of sub-micrometer features. Very high aspect ratios up to 160:1 on trenches of 250 nm have been achieved using the Bosch process and 120:1 on 35 nm-wide trenches using a cryogenic process. The proposed etch recipes are speci fically optimized for sub-micrometer features, and are not compatible with feature sizes in the tens of micrometer range. Based on analyzing data from our experiments and from literature, we show that a previously reported two-parameter empirical logarithmic law accurately describes the dependency of aspect ratio on trench width over a wide range of widths and etch parameters, including the sub-micrometer regime. We also propose a new figure of merit that describes the ultimate aspect ratio achievable for any given etch process.
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Deep trench fabrication by Si (110) orientation dependent etching
Journal of Vacuum Science & Technology B: …, 1995
A simple technique for creating trench structures in silicon using readily available wafer processing techniques is discussed. By using orientation dependent etching of 110 Si, it is possible to create trenches in silicon with vertical sidewalls. The etching anisotropy of certain solutions used with this technique is greater than 600:1 110:111 etching, making it possible to fabricate virtually any value of aspect ratio trench. For this technique, which makes use of two etchants, an anisotropy of 50:1 is demonstrated. The equipment, materials, and processing steps required are outlined.
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Highly Selective Directional Atomic Layer Etching of Silicon
Following Moore's Law, feature dimensions will soon reach dimensions on an atomic scale. For the most advanced structures, conventional plasma etch processes are unable to meet the requirement of atomic scale fidelity. The breakthrough that is needed can be found in atomic layer etching or ALE, where greater control can be achieved by separating out the reaction steps. In this paper, we study selective, directional ALE of silicon using plasma assisted chlorine adsorption, specifically selectivities to bulk silicon oxide as well as thin gate oxide. Possible selectivity mechanisms will be discussed.
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