75 GHz InP HBT distributed amplifier with record figures of merit and low power dissipation (original) (raw)
Related papers
98-GHz InP/InGaAs HBT amplifier with 26-dB gain
IEEE Microwave and Guided Wave Letters, 1999
In this letter the design and characterization of an InP/InGaAs single heterojunction bipolar transistor (HBT) W -Band amplifier is described. The amplifier achieves 26-dB gain at 98 GHz with a bandwidth of 3.1 GHz. On-wafer S-parameter and gain compression measurements are presented. The goal was to explore high gain HBT-amplifiers around 100 GHz. No comparable HBT amplifier at these frequencies could be found in literature. Index Terms-Heterojunction bipolar transistor (HBT), InP/InGaAs, millimeter-wave amplifier.
65 GHz small-signal-bandwidth switched emitter follower in InP heterojunction bipolar transistors
Electronics Letters, 2012
Performances of two switched emitter follower structures for large bandwidth applications have been optimised, compared, implemented and measured. These circuits have been fabricated with a 320 GHz-F T InP double heterojunction bipolar transistor process. Measurements in track mode show a small-signal bandwidth over 65 GHz for one structure and over 50 GHz for the other. Track mode SFDR measured for 500 mV PP up to 15 GHz signal input is greater than 45 dBc.
50 to 70 GHz InP/InGaAs HBT amplifier with 20 dB gain
Indium Phosphide and Related Materials Conference, 1999
In this paper the design and a complete characterization of an InP/InGaAs single heterojunction bipolar (SHBT) mm-wave amplifier is described. The circuit is designed for the 60 GHz band allocated for wireless LAN and mobile communications. The amplifier achieves a gain of 20 dB from 50 GHz to 70 GHz. Beside S-parameter noise and gain compression measurements are presented. No
IEEE Transactions on Microwave Theory and Techniques, 2019
This article is an extension of the previous report on an ultrawideband distributed amplifier (DA) in the InP double heterojunction bipolar transistor (DHBT) technology. With the choice of a tricode unit cell, the Miller capacitance is reduced and a larger bandwidth (BW) is obtained. Measured S-parameters show a 3-dB BW of near dc to >170 GHz with a gain of 12 dB. In addition, the circuit operates in low dc bias conditions, thus yielding a low measured noise figure (NF) of 8 dB over the frequency range of 5-50 GHz and 12 dB at 135 GHz. Within the 5-50-GHz frequency range, the NF is only 0.5 dB higher than the NF of a similar DA with cascode unit cell. When the circuit is measured for large-signal condition, it reaches a 1-dB output compression point, P 1 dB , of 8.4 dBm at 150 GHz, a saturated output power of approximately 10 dBm, and an associated maximum power-added efficiency (PAE) of 6%. This is the best linearity as well as the highest saturated output power and PAE reported at this frequency for DAs. When measured at 20 GHz, the circuit shows a P 1 dB , of 9 dBm and output referred third-order intercept point of 22 dBm, a saturated output power of 11 dBm, and an associated maximum PAE of 6%, thereby proving its uniform large-signal character within the full band. In short, this circuit brings in the unique combination of low NF, highly linear characteristics, and high PAE simultaneously together over large BW. Furthermore, the circuit consumes 180 mW of dc power only. Index Terms-Distributed amplifier (DA), InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC), traveling-wave amplifier (TWA), ultrawideband low-noise amplifier.
G-band (140-220-GHz) InP-based HBT amplifiers
IEEE Journal of Solid-State Circuits, 2003
We report tuned amplifiers designed for the 140-220-GHz frequency band. The amplifiers were designed in a transferred-substrate InP-based heterojunction bipolar transistor technology that enables efficient scaling of the parasitic collector-base junction capacitance. A single-stage amplifier exhibited 6.3-dB small-signal gain at 175 GHz. Three-stage amplifiers were subsequently fabricated with one design demonstrating 12.0-dB gain at 170 GHz and a second design exhibiting 8.5-dB gain at 195 GHz.
G-band (140-220 GHz) and W-band (75-110 GHz) InP DHBT medium power amplifiers
IEEE Transactions on Microwave Theory and Techniques, 2005
We report common-base medium power amplifiers designed for-band (140-220 GHz) and-band (75-110 GHz) in InP mesa double HBT technology. The common-base topology is preferred over common-emitter and common-collector topologies due to its superior high-frequency maximum stable gain (MSG). Base feed inductance and collector emitter overlap capacitance, however, reduce the common-base MSG. A single-sided collector contact reduces ce and, hence, improves the MSG. A single-stage common-base tuned amplifier exhibited 7-dB small-signal gain at 176 GHz. This amplifier demonstrated 8.7-dBm output power with 5-dB associated power gain at 172 GHz. A two-stage common-base amplifier exhibited 8.1-dBm output power with 6.3-dB associated power gain at 176 GHz and demonstrated 9.1-dBm saturated output power. Another two-stage common-base amplifier exhibited 11.6-dBm output power with an associated power gain of 4.5 dB at 148 GHz. In the-band, different designs of single-stage common-base power amplifiers demonstrated saturated output power of 15.1 dBm at 84 GHz and 13.7 dBm at 93 GHz. Index Terms-InP heterojunction bipolar transistor, millimeterwave amplifier, monolithic microwave integrated circuit (MMIC) amplifiers. I. INTRODUCTION W-BAND (75-110 GHz) and-band (140-220 GHz) amplifiers have applications in wide-band communication systems, atmospheric sensing, and automotive radar. The high mobility of InGaAs, high electron saturation velocity of InP, and submicrometer scaling result in wide-bandwidth transistors with high available gain in this frequency band. In a transferred substrate InP HBT process, 6.3-dB gain is reported at 175 GHz with a single-stage amplifier [1]. State-of-the-art results in InP high electron-mobility transistor (HEMT) technologies include a three-stage amplifier with 30-dB gain at 140 GHz [2], a three-stage amplifier with 12-15-dB gain from 160 to 190 GHz [3], and a three-stage power amplifier with 10-dB gain from 144 to 170 GHz [4].
IEEE Electron Device Letters, 2003
Vertical scaling of the epitaxial structure has allowed submicron InP/InGaAs-based single heterojunction bipolar transistors (SHBTs) to achieve record high-frequency performance. The 0.25 16 m 2 transistors, featuring a 25-nm base and a 100-nm collector, display current gain cutoff frequencies T of 452 GHz. The devices operate at current densities above 1000 kA/cm 2 and have BV CEO breakdowns of 2.1 V. A detailed analysis of device radio frequency (RF) parameters, and delay components with respect to scaling of the collector thickness is presented.
G-band (140-220-GHz) and W-band (75-110-GHz) InP DHBT Power Amplifiers
We report common-base power amplifiers designed for G-band (140-220-GHz) and W-band (75-110-GHz) in InP mesa double heterojunction bipolar transistor (DHBT) technology. The common-base topology is preferred over common-emitter and common-collector topologies due to its superior high frequency maximum stable gain (MSG). Base feed inductance and collector emitter overlap capacitance, however, reduce the common-base MSG. A single-sided collector contact reduces C ce and hence, improves the MSG. A single-stage common-base tuned amplifier exhibited 7-dB small-signal gain at 176 GHz. This amplifier demonstrated 8.7 dBm output power with 5-dB associated power gain at 172 GHz. A two-stage common-base amplifier exhibited 8.1 dBm output power with 6.3-dB associated power gain at 176 GHz and demonstrated 9.1 dBm saturated output power. Another two-stage common-base amplifier exhibited 11.6 dBm output power with an associated power gain of 4.5-dB at 148 GHz. In W-band, different designs of single-stage common-base power amplifiers demonstrated saturated output power of 15.1 dBm at 84 GHz and 13.7 dBm at 93 GHz.
IEEE Transactions on Microwave Theory and Techniques, 2000
The design methodology, processing technology, and characterization of high-gain GaInP/GaAs heterojunctoin-bipolar-transistor-based distributed amplifiers are described in this paper. Distributed amplifiers with different active cells and number of stages have been compared for high-gain (>12 dB) and high-bandwidth (>25 GHz) performance. Based on the results, a three-stage attenuation-compensated distributed amplifier with a flat gain (S 21) of 12.7 dB over a bandwidth of 27.5 GHz was successfully fabricated and tested. Eye-diagram tests at 10 Gb/s show very open eye characteristics with no signal skewing. The amplifier achieves a minimum noise figure of 4 dB at 3 GHz and a sensitivity of 025 dBm for 10-Gb/s nonreturn-to-zero 2 15 0 1 pseudorandom bit sequence with a bit error rate of 10 09 .