Ion Beam Doping of Silicon Nanowires (original) (raw)
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Fabrication of Ion-Implanted Si Nanowire p-FETs
The Journal of Physical Chemistry C, 2008
We have successfully demonstrated p-type silicon nanowire field-effect transistors (Si NW p-FETs) prepared using B-ion implantation with a dose of 1 × 10 13 ions/cm 2 and an energy of 10 keV. The experimental I D -V DS characteristics for B-implanted Si NW FETs revealed a clear p-channel FET behavior with a hole mobility of ∼6.9 cm 2 /(V · s), a hole concentration of ∼1.1 × 10 19 cm -3 , and a transconductance of ∼29 nS/µm at a V DS of 0.1V. The B-implanted Si NWs were annealed at a temperature of 950°C for 30 and 60 s. The 2D-ATHENA and ATLAS software were used to accurately simulate the device fabrication process and the electrical performance, respectively.
Silicon Nanowires: Doping Dependent N- and P- Channel Fet Behavior
MRS Proceedings, 2004
ABSTRACTThe electrical transport properties of field effect transistor (FET) devices made of silicon nanowires (SiNWs) synthesized by pulsed laser vaporization (PLV) were studied. From as-grown PLV-SiNW FET, we found p-channel FET behavior with low conductance. To improve conductance, spin on glass (SOG) and vapor doping were used to dope phosphorus and indium into SiNW, respectively. From doping after synthesis, we could successfully make both n- and p-channel FET devices.
Ex situ n and p doping of vertical epitaxial short silicon nanowires by ion implantation
Nanotechnology, 2009
Vertical epitaxial short (200-300 nm long) silicon nanowires (Si NWs) grown by molecular beam epitaxy on Si(111) substrates were separately doped p- and n-type ex situ by implanting with B, P and As ions respectively at room temperature. Multi-energy implantations were used for each case, with fluences of the order of 1013-1014 cm-2, and the NWs were subsequently annealed by rapid thermal annealing (RTA). Transmission electron microscopy showed no residual defect in the volume of the NWs. Electrical measurements of single NWs with a Pt/Ir tip inside a scanning electron microscope (SEM) showed significant increase of electrical conductivity of the implanted NWs compared to that of a nominally undoped NW. The p-type, i.e. B-implanted, NWs showed the conductivity expected from the intended doping level. However, the n-type NWs, i.e. P- and As-implanted ones, showed one to two orders of magnitude lower conductivity. We think that a stronger surface depletion is mainly responsible for this behavior of the n-type NWs.
Formation of n- and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping
Nanotechnology, 2018
A method for cross-sectional doping of individual Si/SiO2 core/shell nanowires is presented. P and B atoms are laterally implanted at different depths in the Si core. The healing of the implantation-related damage together with the electrical activation of the dopants takes place via solid phase epitaxy driven by millisecond-range flash lamp annealing. Electrical measurements through a bevel formed along the nanowire enabled us to demonstrate the concurrent formation of n- and p-type regions in individual Si/SiO2 core/shell NWs. These results might pave the way for ion beam doping of nanostructured semiconductors produced by using either top-down or bottom-up approaches.
High performance silicon nanowire field effect transistors
Nano Letters, 2003
Silicon nanowires can be prepared with single-crystal structures, diameters as small as several nanometers and controllable hole and electron doping, and thus represent powerful building blocks for nanoelectronics devices such as field effect transistors. To explore the potential ...
Journal of Electronic Materials, 2019
Silicon nanowires (SiNWs) with unique band structure and transport properties are considered potential candidates for future nanoelectronics devices such as field-effect transistors (FETs). We present a model of a SiNW-FET comprising h100i silicon atomic wires with a cylindrical-shaped metallic gate wrapped around the wires. For this purpose, we report on the energy band structure and density of states of SiNWs of diameters 5.93 Å , 9.71 Å and 13.55 Å with h100i cleavage orientation by employing generalized gradient approximation and meta-generalized gradient approximation as well as the semi-empirical extended-Huckel model. Moreover, the transmission and transport properties of doped and undoped SiNWs of diameter 5.93 Å with and without vacancy defects are explored using a non-equilibrium green function approach with self-consistent calculations. The corresponding I-V characteristics of the proposed cylindrical-shaped metallic-gate SiNW-FET under a specific gate voltage are presented. Our results show that the undoped SiNWs with vacancy defects on the surface are more suitable candidates for nanoelectronic device applications such as FETs in contrast to their counterparts with vacancies at the center.
ACS Applied Materials & Interfaces, 2012
Aligned arrays of silicon nanowires (aa-Si NWs) allow the exploitation of Si NWs in a scalable way. Previous studies explored the influence of the Si NWs' number, doping density, and diameter on the related electrical performance. Nevertheless, the origin of the observed effects still not fully understood. Here, we aim to provide an understanding on the effect of channel number on the fundamental parameters of aa-Si NW field effect transistors (FETs). Toward this end, we have fabricated and characterized 87 FET devices with varied number of Si NWs, which were grown by chemical vapor deposition with gold catalyst. The results show that FETs with Si NWs above a threshold number (n > 80) exhibit better device uniformity, but generally lower device performance, than FETs with lower number of Si NWs (3 ≤ n < 80). Complementary analysis indicates that the obtained discrepancies could be explained by a weighted contribution of two main groups of Si NWs: (i) a group of gold-free Si NWs that exhibit high and uniform electrical characteristics; and (ii) a group of gold-doped Si NWs that exhibit inferior electrical characteristics. These findings are validated by a binomial model that consider the aa-Si NW FETs via a weighted combination of FETs of individual Si NWs. Overall, the obtained results suggest that the criterions used currently for evaluating the device performance (e.g., uniform diameter, length, and shape of Si NWs) do not necessarily guarantee uniform or satisfying electrical characteristics, raising the need for new growth processes and/or advanced sorting techniques of electrically homogeneous Si NWs.