Infrared materials for thermophotovoltaic applications (original) (raw)

This paper discusses advancements in infrared materials suited for thermophotovoltaic (TPV) applications, emphasizing the potential of low bandgap III-V semiconductors like InGaAs and InGaAsSb. It outlines the expected efficiencies of TPV devices when paired with innovative spectral control filters, indicating that while theoretical conversion efficiencies may reach traditional heat engine levels, experimental results have yet to surpass 20%. The performance metrics of different diode configurations are analyzed, illustrating their quantum efficiencies, open circuit voltage factors, and fill factors. Additionally, the implications of spectral control technology on TPV efficiency are examined, highlighting both benefits and limitations.