Sub-micron FBAR modeling including FEM simulations (original) (raw)

CAS 2010 Proceedings (International Semiconductor Conference), 2010

Abstract

Analytical and finite element models of sub-micron Film Bulk Acoustic Resonator (FBAR) based on GaN are reported. The analytical modelling is based on Mason's model for three composite layer FBAR structure. The numerical modelling shows good agreement with theoretical and experimental results previously obtained on FBAR operating around 6 GHz.

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