Transport properties of InGaAs/GaAs Heterostructures with δ-doped quantum wells (original) (raw)

Related papers

Admittance spectroscopy of ring diode InGaAs/InAlAs/InP quantum-well structures

Anton Biryukov

Semiconductors, 2012

View PDFchevron_right

Вертикальный транспорт в гетеропереходах II типа с композитными квантовыми ямами InAs/GaSb/AlSb в сильном магнитном поле

J. Pangrac

Журнал технической физики

View PDFchevron_right

Исследование структурных и люминесцентных свойств гетероструктур InAs/GaAs с легированными Bi потенциальными барьерами

Alexander Pashchenko

Физика и техника полупроводников, 2018

View PDFchevron_right

Диссипативное туннелирование электронов в вертикально связанных двойных асимметричных квантовых точках InAs/GaAs(001)

Jorge Erubey

Журнал технической физики, 2021

View PDFchevron_right

CHEMICAL DISSOLUTION InAs, InSb, GaAs AND GaSb IN THE (NH4)2Cr2O7−HBr−H2O ETCHING COMPOSITIONS

Vasyl Tomashik

2017

View PDFchevron_right

Universal Character of Tunnelling Conductance of Metal–Insulator–Metal Heterostructures with Nanosize Oxide Interlayers

Mikhail Belogolovskii

Uspehi Fiziki Metallov, 2011

View PDFchevron_right

Transport Phenomena in Graphene in Generalized Landauer – Datta – Lundstrom Model

Maksym Strikha

Sensor Electronics and Microsystem Technologies, 2016

View PDFchevron_right

Electrophysical and photoelectric characteristics of a three-barrier photodiode GaAs structure

anvar yakubov

Технология и конструирование в электронной аппаратуре, 2018

View PDFchevron_right

Excess Quasi-Particle Current in Josephson Superconductor—Doped Semiconductor—Superconductor Heterostructures MoRe—Si (W)—MoRe

Mikhail Belogolovskii

METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2016

View PDFchevron_right

Влияние структуры омических контактов на характеристики GaAs/AlGaAs фотоэлектрических преобразователей

Александра Малевская

Журнал технической физики, 2018

View PDFchevron_right

Мінізонна електропровідність у надґратках кубічних квантових точок гетеросистеми InAs/Ga_xIn_1-xAs

Roman I Pazyuk

Фізика і хімія твердого тіла

View PDFchevron_right

Physics of Nanotransistors: Landauer – Datta – Lundstrom Transport Model and Ballistic Mosfet

Maksym Strikha

Sensor Electronics and Microsystem Technologies, 2019

View PDFchevron_right

Two Types of Defects Involved in the Transportation of Helium Atoms in the Disordered Structure of Quartz

evgenii kalashnikov

Bulletin of the Moscow State Regional University (Physics and Mathematics), 2017

View PDFchevron_right

SIMULATION OF HIGH-TEMPERATURE ANNEALING OF GaAs NANOWIRE ARRAY

Nataliya Shwartz

Mathematical modeling in materials science of electronic component

View PDFchevron_right

Transport properties of lattice fluid with SALR-potential on a simple square lattice

Yaroslav Groda

2021

View PDFchevron_right

Optical Absorption and Raman Scattering in Doped Crystals TlGaSe2 and TlInS2

N. Drozdov

Izvestiya of Saratov University. New Series. Series: Physics, 2018

View PDFchevron_right

Peculiarities of conduction mechanism in n-ZrNiSn intermetallic semiconductor heavily doped with Lu impurity

Andriy Horyn

Journal of Physical Studies, 2012

View PDFchevron_right

Fabrication, Properties and Application of Ge-on-GaAs Thin Nanoheterogeneous Films

Peter Lytvyn

View PDFchevron_right

Forming interface in Pd/Fe/GaAs/InGaAs structure for optical detector of free-electron spin

Mariya Neklyudova

Technical Physics Letters, 2012

View PDFchevron_right

Dipole charge-carrier capture centers in organic crystals

Andrey Kadashchuk

View PDFchevron_right

Температурное поведение спектров оптического поглощения квантовых точек InP/ZnS

Александр Вохминцев

Журнал технической физики, 2017

View PDFchevron_right

Gamma-induced metastable states of doped, amorphous, hydrated silicon

Saydulla Persheyev

Semiconductors, 1998

View PDFchevron_right

Transport of Heat by Phonons in Generalized Landauer – Datta – Lundstrom Model

Maksym Strikha

Sensor Electronics and Microsystem Technologies, 2016

View PDFchevron_right

Структурные свойства твердых растворов GaInAsSbBi, выращенных на подложках GaSb

Alexander Pashchenko

Письма в журнал технической физики

View PDFchevron_right

Light-emitting properties of A2B6 semiconductor quantum dots

Sergii Kalytchuk

View PDFchevron_right

Lessons of Nanoelectronics: Spin Transport and Quantum Spin Hall Effect by «Bottom – Up» Approach

Maksym Strikha

Sensor Electronics and Microsystem Technologies, 2014

View PDFchevron_right

Transport Barriers and Self-Organization of Plasmas

S. E Lysenko

Problems of Atomic Science and Technology, Ser. Thermonuclear Fusion

View PDFchevron_right

Electronic and optoelectronic properties of intrinsic and cooper-doped germanium nanowire network devices

Riama Gouveia

Materials Today: Proceedings, 2021

View PDFchevron_right

Кристаллофизическая модель ионного переноса в нелинейно-оптических кристаллах KTiOPO-=SUB=-4-=/SUB

elham jabari

Журнал технической физики, 2018

View PDFchevron_right

THERMODYNAMIC PROPERTIES OF BaFe2As2 AND MAGNETIC SUPERCONDUCTOR Ba1-XLaXFe1.9Pt0.1As2

sahin uyaver

View PDFchevron_right

Effect of anisotropy of band structure on optical gain in spherical quantum dots based on PbS and PbSe

Andrey Lipovskii

Semiconductors, 1999

View PDFchevron_right

In-=SUB=-0.8-=/SUB=-Ga-=SUB=-0.2-=/SUB=-As квантовые точки для GaAs-фотопреобразователей: особенности роста, исследование методом металлорганической газофазной эпитаксии, и свойства

Debby Andriany

Журнал технической физики, 2018

View PDFchevron_right

PHOTOCONDUCTIVITY OF SEMIINSULATING GaAs UNDER STRONG EXCITATION CONDITIONS

Vladimir Bredikhin

View PDFchevron_right

Channeling of ultra-relativistic positrons in bent diamond crystals

Вадим Иванов

St. Petersburg Polytechnical University Journal: Physics and Mathematics, 2015

View PDFchevron_right

Формування карбонових плівок як підзатворного діелектрика GaAs мікросхем на Si-підкладках

Volodymyr Gryga

2017

View PDFchevron_right