CONDUCTIVITY OF COMPENSATED MODERATELY DOPED p-TYPE Ge AT LOW AND ULTRALOW TEMPERATURES (original) (raw)

Abstract

The concentration and compensation dependences of the conductivity of nuclear-doped p-Ge with the main impurity concentration NGa= (0.6-3.0) 1017 cm-3 and various compensation degree K=0.1-0.95 were studied in a wide temperature range (300- 0. 06 K). It is established that at K<0.8 the conductivity via the impurity-band is determined by two mechanisms: the E2-conduction associated with activation of carriers into delocalized states in the impurity band sigma0=exp(-E2 /kT) at T> 1K; and the hopping conduction via states below the delocalization threshold at T< 1 K, first with a constant and then (at lower temperatures) with a variable activation energy, sigma~exp(-E3/kT) and sigma~exp[-(T0/T)n], respectively. There obtained the values sigma0=0.4-11 Ohm-1 cm-1 and the dependence of sigma0(K) at different NGa , sigmamin=6 Ohm-1 cm-1 (K=0) and sigmamin=11 Ohm-1 cm-1 (K=0.23). It is shown that the E3-conduction appears only along with the E2-conduction. Explanation of obtained r...

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