Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material (original) (raw)

Materials Science Forum, 2005

Abstract

G. Gudjónsson1,a, H. Ö. Ólafsson1,b, F. Allerstam1,c, P.-Å. Nilsson1,d, E. Ö. Sveinbjörnsson1,e, T. Rödle2,f and R. Jos2,g ... 1Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, ... Chalmers University of Technology, Göteborg, ...

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