Single-step growth of InGaAsP/InP laser array on patterned InP substrate (original) (raw)
Related papers
InGaAsP/GaAs SCH SQW laser arrays grown by LPE
Optics & Laser Technology, 2000
InGaAsP=InGaP=GaAs separate conÿnement heterostructure (SCH) single quantum well (SQW) laser structures have been obtained by an improved liquid-phase epitaxy (LPE) process. Wide-contact stripe lasers have been fabricated with threshold current density below 300 A=cm 2 and cavity length of 800 m. Finally, with the same grown wafers, 1-cm bar laser diode (LD) arrays are made with 150 m wide stripes and a maximum ÿll factor of 30%. Continuous wave (CW) power output of 20 W has been reached. : S 0 0 3 0 -3 9 9 2 ( 0 0 ) 0 0 0 7 6 -1
Applied Physics Letters, 1995
3 W cw output power has been obtained from aluminum-free, strained-layer double-quantum well ͑DQW͒ InGaAs/InGaAsP/InGaP uncoated, 100-m-wide stripe diode lasers ͑ϭ0.945 m͒ grown by low-pressure MOCVD on exact ͑100͒ GaAs substrates. The combination of high-band-gap ͑1.62 eV͒ InGaAsP confinement layers and the DQW structure provides relatively weak temperature dependence for both the threshold current I th as well as the external differential quantum efficiency d . Furthermore, the series electrical resistance for 100 mϫ600 m stripe-contact devices is as low as 0.12 ⍀. As a result, the power conversion efficiency reaches a maximum of 40% at 8 ϫI th , and decreases to only 33% at the maximum power ͑i.e., 3 W͒ at 28ϫI th . Low-temperature ͑12 K͒ photoluminescence measurements of InGaAs/InGaAsP quantum-well structures exhibit narrow linewidths ͑Ͻ10 meV͒ for material grown on exact ͑100͒ GaAs substrates, while growths on misoriented substrates exhibit linewidth broadening, as a result of ''step bunching.'' Laser structures grown on misoriented substrates exhibit increased temperature sensitivity of both I th and d , compared with structures grown on exact ͑100͒ substrates.
IEEE Journal of Quantum Electronics, 1999
In this paper, we study both experimentally and theoretically how the change of the p-doping profile, particularly the p-i junction placement, affects the output characteristics of 1.3-m InGaAsP-InP multiple-quantum-well (MQW) lasers. The relationship between the p-doping profile before and after regrowth is established, and the subsequent impact of changes in the p-i junction placement on the device output characteristics, is demonstrated. Device characteristics are simulated including carrier transport, capture of carriers into the quantum wells, the quantum mechanical calculation of the properties of the wells, and the solution for the optical mode and its population selfconsistently as a function of diode bias. The simulations predict and the experiments confirm that an optimum p-i junction placement simultaneously maximizes external efficiency and minimizes threshold current. Tuning of the base epitaxial growth Zn profile allows one to fabricate MQW devices with a threshold current of approximately 80 A/cm 2 per well for devices with nine QW's at room temperature or lasers with a characteristic temperature T 0 = 70 K within the temperature range of 20 C-80 C.
Impact of growth rate on the quality of ZNS-MQW InGaAsP/InP laser structures grown by LP-MOVPE
Journal of Electronic Materials, 2000
We investigated the influence of the growth rate on the quality of zero-netstrained InGaAsP/InGaAsP/InP multiquantum well structures for 1.55 µm emission grown by low pressure metalorganic vapor phase epitaxy. The samples consisted of fixed compressive strained wells (ε = +1%) and tensile strained barriers (ε = -0.5%) grown with different quaternary bandgap wavelengths (λ B = 1.1-1.4 µm). Using higher growth rates, we obtained for the first time high quality zero net strained multi quantum well structures, regardless having constant group V composition in the well and barriers. The samples were analyzed by x-ray diffraction, photoluminescence and atomic force microscopy techniques. The amplitude of surface modulation roughness along [011] direction decreased from 20 nm to 0.53 nm with increasing growth rate and/or quaternary compositions grown outside the miscibility gap. A new deep PL broad emission band strongly correlated with the onset of wavy layer growth is also reported. Broad area and ridge waveguide lasers with 10 wells exhibited low losses (34 cm -1 ) and low threshold current densities at infinite cavity length (1020 A·cm -2 and 1190 A·cm -2 , respectively).
1.47–1.49-μm InGaAsP/InP diode laser arrays
Applied Physics Letters, 2003
Continuous-wave power of 25 W at 1.47-m was obtained from a 20-element, 1-cm-wide, one-dimensional diode laser array mounted in a microchannel water-cooled heat sink. The coolant temperature was 16°C. A two-dimensional array comprising four laser bars achieved a quasi-cw output of 110 W at a wavelength of 1.49 m, with an 8-9-nm full width at half-maximum spectrum width. The coolant temperature was 18°C. We developed a theoretical model that describes array heating. Thermal resistances of 0.56, 0.4, and 0.34 K/W were experimentally and theoretically determined for arrays with fill factors of 10%, 20%, and 40%, respectively.
Monolithic serial InGaAs-GaAs-AlGaAs laser diode arrays
IEEE Photonics Technology Letters, 2000
Top-contact monolithic serially-biased InGaAs-GaAs-AIGaAs (A-0.93 pm) broad area strained-layer quantum well laser arrays have been fabricated on a semi-insulating GaAs substrate. The laser array consists of four individual laser diodes and operates up to 2.8 W at 3.6 A (supply limited) per uncoated facet under pulsed conditions (1.5 kHz, 2 p s). The threshold current is-0.5 A, and the peak slope efficiency and the peak electrical-to-optical conversion efficiency of an individual laser element are-0.53 WIA and 14%), respectively. The near-field intensity distribution is shown to be broad enough to fill the entire active region under the p-metal stripe (125 pm) of the individual laser diodes at high current levels.
IEEE Journal of Quantum Electronics, 1984
The mass-transported buried-heterostructure lasers have been investigated in detail. Techniques have been developed for fabrication control and wafer characterization. High yield of low-threshold lasers was obtained with the lowest threshold current being 5.5 mA. Differential quantum efficiencies as high as 28 percent per facet and smooth far-field patterns were also obtained. Deep Zn-diffusion and higher p-doping have been used to improve the linearity of the lightcurrent characteristics. Linear light output to greater than 13 mW per facet and well-behaved threshold-temperature dependence were achieved. A conformal mapping technique has been used to calculate the voltage distribution in the laser mesa. The forward-bias voltage thus obtained for the InP pn homojunctions in the transported regions is shown to be capable of resulting in the sublinear dependence of light output on current observed in lasers with lightly p-doped cap layers. The current limit within which the laser can be operated without leakage through the homojunctions has been calculated for various device geometries and doping levels.