Investigation of C[sub x]Si defects in C implanted silicon by transmission electron microscopy (original) (raw)

Buried C x Si layers were produced by high-energy implantation of carbon into CZ silicon. The depth distribution of carbon, the morphology of the buried layers, as well as the precipitation of C were investigated as functions of rapid thermal annealing between 700 and 1300°C, using transmission electron microscopy, secondary ion mass spectroscopy, and positron annihilation measurements. Different kinds of microdefects occur: below Ϸ800°C there are vacancy agglomerates as well as metastable C-Si agglomerates ͑⌽Ϸ2 nm͒, whereas at higher temperatures ␤-SiC precipitates are observed. Results are discussed in terms of the interaction between C atoms and radiation-induced defects.