Optical and Structural Properties of Nickel Oxide Thin Films Prepared by Closed-Field Unbalanced Dual-Magnetrons Sputtering Technique (original) (raw)

Reactive DC magnetron sputter deposition and structural properties of NiO thin films

Engineering and Technology Journal, 2015

Nickel oxide (NiO) films were deposited by using a homemade DC reactive magnetron sputtering system at different working pressure in the range (0.05-0.14)mbar. The effect of working pressure on the structure, surface morphology, optical of NiO films was investigated. X-ray diffraction (XRD) results suggested that the deposited films were formed by nanoparticles with average particle size in the range of (8.145-29.195) nm. And the films are identified to be polycrystalline nature with a cubic structure along (111) and (101) orientation also Ni2O3 was found by XRD. The texture of the films was observed using SEM and AFM, it was observed that the grain size was increased with working pressure. The energy band gap was found to be in the range of (4.1 eV to 3.9 eV) When the film thickness varying from 73 nm to 146.9 nm.

Deposition and properties of nickel oxide films produced by DC reactive magnetron sputtering

Vacuum, 1998

Nickel oxide (NiO) thin films were prepared on Si substrates by DC reactive magnetron sputtering from a nickel metal target in Ar+O 2 with the relative O 2 content varied from 15 to 50%. The effects of the O 2 gas content on the deposition rate, structure, composition and electrical properties were investigated. NiO stoichiometric films were obtained with a polycrystalline structure and a specific resistivity of near 300 Vcm at 25% O 2 content in the discharge gas. Film composition and structure, and this resistivity, were dependent on the discharge parameters. Thus the deposited films had amorphous and polycrystalline structures with Ni/O ratio ranges between 0.71 and 1.02 as a function of the discharge O 2 content.

Preparation and Characterization of Nickel Oxide Thin Films: A review

2016

Abundant literature is available on the preparation and characterization of metal oxide films as described by many researchers. Generally, physical and chemical deposition techniques could be used to prepare NiO films on various substrates. The obtained films will be studied using different tools such as xray diffraction, scanning electron microscopy and UV-Visible spectrophotometer in order to determine the best experimental conditions.

Synthesis and characterization of nickel oxide (NiO) thin films

Nickel Oxide (NiO) thin films were deposited by simple spray pyrolysis technique using nickel nitrate solution onto preheated glass substrate at substrate temperature 320 0 C and 380 0 C. Influence of substrate temperature on structural, morphological and optical properties were studied using X-ray diffraction, scanning electron microscopy and optical absorption. XRD results reveal that films are polycrystalline with single phase cubic structure and crystallinity of the film increases as the temperature increases. Surface morphological study shows spherical granular like shape at high deposition temperature. Optical band gap increases from 2.85 to 3.01 eV as the temperature increases.

Electrical and optical properties of NiO films deposited by magnetron sputtering

Optica Applicata

Films of transparent semiconductors are widely studied and developed because of high potential applications in electronics in last decade. Our work concerns the properties of NiO films fabricated by RF magnetron sputtering. Electrical and optical parameters of the films were characterized using Hall and transmittance measurements, respectively. P-type conductivity of as-deposited films and after annealing in oxygen or argon at the temperature range from 300 °C to 900 °C was verified. Transmittance of NiO films strongly depends on deposition temperature and oxygen amount during sputtering. Films deposited at room temperature without oxygen have transmittance near 50% in the visible range and resistivity about 65 Ωcm. An increase in oxygen amount in deposition gas mixture results in higher conductivity, but transmittance decreases below 6%. Resistivity of 0.125 Ωcm was attained at sputtering in oxygen. Films deposited at temperature elevated up to 500 °C are characterized by transmitt...

Electrochromic nickel oxide thin films deposited under different sputtering conditions - 1996

Solid State Ionics, 1996

In this work, non stoichiometric nickel oxide (NiOx) thin films were deposited by r.f. reactive sputtering of a metallic nickel target in an O,-Ar atmosphere. A systematic variation of two deposition parameters was done: the oxygen flux (4) and the r.f. power (P). The electrochemical characterization of the films was performed in aqueous electrolyte. The spectral transmittance measurements, as well as the X-ray diffraction analysis were performed ex-situ, while monochromatic transmittance and stress measurements were performed in situ. Samples deposited at low oxygen flux (or high power) are transparent, in contrast to those deposited at high oxygen flux (or low power), which are dark brown. The films were cubic NiO, with preferred orientation in the (111) direction. Lattice parameters increase with increasing oxygen flux during deposition, but decrease with increasing power. For all samples, the ratio O/Ni was greater than 1, as determined by Rutherford back-scattering analysis. Also, an important hydrogen content was found in the films. The relationship between optical, electrochemical, mechanical, structural and morphological behaviour of the above mentioned films will be reported and discussed in this work.

Effect of plasma oxidation parameters on physical properties of nanocrystalline nickel oxide thin films grown by two-step method: DC sputtering and plasma oxidation

Journal of Theoretical and Applied Physics, 2019

Nanocrystalline nickel oxide (NiO) thin films were successfully grown on quartz substrates by two-step method. In the first step, nickel films were deposited on quartz substrates by DC magnetron sputtering technique. Then, the plasma oxidation of nickel films was used for preparation of nickel oxide. The effect of DC plasma power and treatment time on the structural, morphological and optical properties of the NiO films were investigated by different analyses. XRD results indicated that the plasma powers effectively influenced the structure of films, and the best crystallinity was obtained for plasma power of 15 w and treatment time of 20 min. The XPS, RBS and EDS analysis confirmed the presence of Ni and O elements. The FESEM and AFM images showed a granular structure with spherical shapes of grains. The optical band gap of the films synthesized under different plasma oxidation conditions was also discussed.

Thickness Influence On The Synthesis Of Metal Oxide NiO Using RF-Magnetron Sputtering

2016

These work studies dependences of structural properties, mobility and charge carrier concentration on the thickness of nickel oxide (NiO) nano films deposited on glass substrates by RF reactive magnetron sputtering at an RF power 200 W. The X-ray diffraction (XRD) analyses of nickel oxide nano films indicates that these films are polycrystalline with preferred orientation along (200) plane, crystallite sizes increased from 22.894 nm, to 25.035 nm when the film thickness increase from 50 nm to 150 nm. The microstrain (ε) and dislocation density (δ) decrease as the thickness increases. The average roughness increased from 2.055 nm to 3.191 nm as the thickness increasing. The resistivity of NiO film is increased with an increase in film thickness, which is related to the decrease of carrier concentration with film thickness. The NiO film with a thickness of 150 nm has a maximum resistivity of 50.92 KΩ.cm Keywords—Nickel oxide films; reactive Sputtering; XRD; Structure; Electrical prope...

Study of Annealed NiO Thin Films Sputtered on Unheated Substrate

Japanese Journal of Applied Physics, 2003

Nickel oxide (NiO) thin films were deposited on unheated Si substrates by reactive dc magnetron sputtering. Post-deposition annealing was carried out for NiO films in dry air. The effect of annealing temperature (from 500 to 900 C) on the structural, compositional and surface morphological properties of thin NiO films was investigated. The films were characterized by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and atomic force microscopy (AFM). Only the as-deposited films in the metal-sputtering mode were crystalline. Annealing in dry air led to the formation of crystalline phases in all samples. During the annealing process, changes in the crystal structure occurred. All examined NiO films were semiconductors and their conductance increased by four orders of magnitude between 25 and 350 C.

Structural, optical and electrical characteristics of nickel oxide thin films synthesised through chemical processing method

Physica B-condensed Matter, 2017

A simple and cheap chemical deposition method was used to produce a nickel oxide (NiO) thin film on glass substrates from a solution that contained Ni2+ and monoethanolamine. Thermal treatment of the film at temperatures above 350 °C for 1 h caused decomposition of the nickel hydroxide into nickel oxide. Structural, optical and electrical properties of the film were studied using X-ray diffraction (XRD), spectrophotometry, current-voltage measurements and scanning electron microscopy (SEM). The film was found to be polycrystalline with interplanar spacing of 0.241 nm, 0.208 nm and 0.148 nm for (111), (200) and (220) planes respectively, the lattice constant a was found to be 0.417 nm. The film had a porous surface morphology, formed from a network of nanowalls of average thickness of 66.67 nm and 52.00 nm for as-deposited and annealed films respectively. Transmittance of visible light by the as-deposited film was higher and the absorption edge of the film blue-shifted after annealin...