Oxide defined TJS lasers in InGaAsP/InP DH structures (original) (raw)

Oxide defined transverse junction stripe (TJS) lasers have been developed using InGaAsP/InP double heterostructures (DH) with all epitaxial layers n-type. The laser emission operates at 1.18 µm at room temperature and demonstrates single longitudinal mode operation at lower temperatures, specifically up to 130 K. Higher temperatures lead to the activation of parallel electron injection which causes conventional DH laser operation. The findings indicate that while TJS lasers are functional at low temperatures with low threshold currents and stable output, challenges remain as temperature increases.