Conduction-band dispersion in heteroepitaxial C60 (original) (raw)

1993, Applied Surface Science

The heteroepitaxial growth of C,,, thin films has been studied on various layered substrates. Recausc ot a good Iatticc match and a favourable corrugation of its (001) cleaved surface, GeS was chosen as substrate. Under optimized sublimation conditions, WC have obtained multilayer films of C,,, fullerite, highly ordered on a large scale, as it is proved. for the first time. hy a very sharp LEED pattern. In the case of one monolayer, spots characteristic of both C,,, and substrate are visible. therchy allowing the geometry of the epitaxy to be specified. The empty electronic states of these C,,, films have been studied by I, i-rc~olved invcr\t' photoelectron spectroscopy (KRIPES) and the observed structures show a slight hut significant dispersion with respect to the uavc vector component parallel to the surface. This effect. which crucially depends on the sample thickness. confirm> that the empty conduction-hand r states are partly delocalized