Growth of 2″ InP and GaAs crystals by the vertical gradient freeze (VGF) technique and characterization (original) (raw)

Journal of Crystal Growth, 1999

Growth of 3″ and 4″ gallium arsenide crystals by the vertical gradient freeze (VGF) method

Journal of Crystal Growth, 2000

Vertical gradient freeze GaAs: Growth and electrical properties

Maria Galiano

Low Temperature Growth of Crystalline Semiconductors on Nonepitaxial Substrates

Shreyas Naik

Advanced Materials Interfaces, 2020

Anomalous interface shapes in the seed well during vertical gradient freeze growth of Si-doped GaAs

Journal of Crystal Growth, 2001

Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C

niharika gupta

Proceedings of the National Academy of Sciences, 2019

Effect of growth parameters on dislocation generation in InP single crystal grown by the vertical gradient freeze process

arif nihat güllüoğlu

Acta Materialia, 1999

Direct MOVPE growth of InP on GaAs substrates

Akira Nakamura

Journal of Crystal Growth, 1988

Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy

C. Fonstad

Journal of Applied Physics, 2008

In-situ grown dots of InP on GaAs and GaInP-a comparison

D. Hessman

Proceedings of 8th International Conference on Indium Phosphide and Related Materials, 1996

Early stages of low temperature epitaxial growth of InSb on GaAs

Ryszard Czajka

Crystal Research and Technology, 2005

Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD

Journal of Alloys and Compounds, 2008

Surface size effect on the growth mode and morphology of InP epitaxial films

Angelo Gobbi

Physical Review B, 2000

Growth of InP epitaxial layers by rapid thermal low pressure metalorganic chemical vapor deposition, using tertiarybutylphosphine

A. Feingold

Applied Physics Letters, 1993

Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

Yanbo Wang

Applied Physics Letters, 2014

One-step growth of buried heterostructures by chemical beam epitaxy over patterned InP substrates

Jean-Daniel Ganière

Journal of Crystal Growth, 1994

Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique

Journal of Alloys and Compounds, 2009

Molecular beam epitaxy growth of InP layers on GaAs substrates using GaP decomposition source

Choompol Antarasena

Journal of Crystal Growth, 2001

Epitaxial growth of InP/InAs/InP quantum wells

M. Mihailovic

Superlattices and Microstructures, 1990

Site-controlled growth of InP/GaInP quantum dots on GaAs substrates

Sven Hofling

Nanotechnology, 2012

Modeling analysis of liquid encapsulated Czochralski growth of GaAs and InP crystals

Yuri Makarov

Crystal Research and Technology, 2003

Growth of GaInTlAs layers on InP by molecular beam epitaxy

Bruno Canut

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2001

Selective growth of InGaAs on nanoscale InP islands

Harri Lipsanen

Applied Physics Letters, 1994

Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD

Microelectronics Journal, 2007

A study of two-step growth and properties of In0.82Ga0.18As on InP

Materials Science in Semiconductor Processing, 2009

Optimization of VGF-growth of GaAs crystals by the aid of numerical modelling

Journal of Crystal Growth, 2002

Comparative studies of the epireadiness of 4in. InP substrates for molecular-beam epitaxy growth

Dmitri Lubyshev

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2005

The morphology of an InP wetting layer on GaAs

Harri Lipsanen

Applied Surface Science, 2004

Perspectives of Double Feeding of the Melt Method on the Example of the Analysis of the InAs(1-x)–GaAs(x) Solid Solution Crystals Growth

zaura zohrabbekova

International journal of scientific research and management, 2022

Crystallization of amorphous InAs/GaAs films on GaAs

Esperanza Luna García de la Infanta

Journal of Crystal Growth, 2011

A new precursor for epitaxial growth of indium based semiconductors

Giacomo Torzo

Journal of Crystal Growth, 1995

InAs quantum dot growth on planar InP (1 0 0) by metalorganic vapor-phase epitaxy with a thin GaAs interlayer

Richard Noetzel

Journal of Crystal Growth, 2011

Peculiarities of the track formation in InP and GaAs crystals

Vera Yuvchenko

Vacuum, 2005

Epitaxial growth and processing of compound semiconductors

KENNETH HALL

1996

Growth and properties of In0.52Al0.48As/In0.53Ga0.47As, GaAS: In and InGaAs/GaAs multilayers

Paul R Berger

Journal of Crystal Growth, 1987