Dielectric properties of rf sputtered Ta 2 O 5 on rapid thermally nitrided Si (original) (raw)

Semiconductor Science and Technology, 2005

Abstract

Abstract. Dielectric properties, including leakage currents of stacked structures composed of rf sputtered Ta 2 O 5 and ultrathin SiO x N y grown by rapid thermal nitridation (RTN) in N 2 O or NH 3 ambient, have been investigated. It was previously established that the leakage current in the structures is controlled by both hopping conduction and tunnelling in the SiO x N y layer and Poole-Frenkel emission in Ta 2 O 5. The analysis shows that the RTN in N 2 O gives higher barriers, lower SiO x N y layer thickness and lower permittivity than in NH 3. It ...

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