Effect of Traps on Carrier Injection and Transport in Organic Field-effect Transistor (original) (raw)

In this paper, new-improved carriers mobility model of OFET (Organic Field Effect Transistor) structures is presented. It is proposed to introduce two new factors: traps concentration ratio and electric field degradation factor, in carriers mobility model. The imact of OFET geometry is also considered. The above-mentioned model includes also carriers mobility dependence on temperature and electric field. Proposed model is incorporated in current-voltage characteristics of OFET.