original ) (raw )Thickness measurement of semiconductor thin films by energy dispersive X-ray fluorescence benchtop instrumentation: Application to GaN epilayers grown by molecular beam epitaxy
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MRS Proceedings, 1996
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2009
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XPS metod as useful tool for studiem of quantum well epitaxial materials: Chemical composition and thermal stability of InGaN/GaN multilayers
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The Growth Kinetics and Surface Morphology of GaN Epitaxial Layers on Sapphire
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