Novel low temperature surface reconstructions of GaN(0001): A LT-STM investigations (original) (raw)

2006

Abstract

The nitrogen polar gallium-rich GaN (0001 ) samples are grown on sapphire (0001) substrates at sample temperature of 650 ^0 C using r.f. N-plasma molecular beam epitaxy. During the growth, the surface is monitored by using reflection high energy electron diffraction and 3x3 and 6x6 reconstructed surface patterns have been observed. The freshly grown samples are then transferred to a

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