Piezoresistance behaviors of ultra-strained SiC nanowires (original) (raw)

Preparation and Characterization of Tin Oxide Nanowires on SIC

2007

Interest in nanowires of metal oxide oxides has been exponentially growing in the last years, due to the attracting potential of application in electronic, optical and sensor field. We have focused our attention on the sensing properties of semiconducting nanowires as conductometric and optical gas sensors. Single crystal tin dioxide nanostructures were synthesized to explore and study their capability in form of multi-nanowires sensors. The nanowires of SnO2 have been used to produce a novel gas sensor based on Pt/oxide/SiC structure and operating as Schottky diode. For the first time, a reactive oxide layer in this device has been replaced by SnO2 nanowires. Proposed sensor has maintained the advantageous properties of known SiC- based MOS devices, that can be employed for the monitoring of gases (hydrogen and hydrocarbons) emitted by industrial combustion processes.

Growth and characterization of single crystalline tin oxide (SnO 2) nanowires

Journal of Crystal Growth, 2006

Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon J. Appl. Phys. 112, 083108 (2012) Light-management in ultra-thin polythiophene films using plasmonic monopole nanoantennas Appl. Phys. Lett. 101, 151106 (2012) Effective light management of three-dimensionally patterned transparent conductive oxide layers

Heteroepitaxial ZnO nano hexagons on p-type SiC

Journal of Crystal Growth, 2010

ZnO single crystal nanohexagons have been grown heteroepitaxially on p-type Si-face 4H-SiC substrates with 8 o miscut from [0001] by catalyst-free atmospheric pressure metalorganic chemical vapor deposition and characterized by x-ray diffraction, scanning and transmission electron microscopy as well as energy disperse x-ray and cathodoluminescence analyses. The as-grown ZnO nanohexagons have a pillar shape terminated by a and c plane facets, and are aligned along the growth direction with the epitaxial relation [0001] ZnO //[0001] 4H-SiC and [10 1 0] ZnO //[10 1 0] 4H-SiC . The ZnO nanohexagons demonstrate intense UV emission ( NBE = 376 nm) and negligible defect related luminescence.

ELECTRICAL PROPERTIES OF NANOROD-BASED ZnO/SiC HYBRID HETEROJUNCTIONS

NANOCON 2019 Conference Proeedings, 2020

ZnO nanorods have attracted increasing interest in recent years due to their potential in optoelectronic applications. The lack of p-type ZnO emphasizes the importance of rectifying junctions realized on other ptype materials. SiC is a good candidate to create hybrid heterojunctions with ZnO due to its wurtzite crystal structure and a small lattice and thermal mismatch. The ZnO/SiC heterojunctions have a potential to show intense UV electroluminescence. We investigate morphology and electrical properties of a single verticallyoriented ZnO nanorod on a SiC substrate. The current-voltage measurements are performed directly in the vacuum chamber of a scanning electron microscope. The contact to a single nanorod is obtained by a nanoprobe, which allows for the measurement of the current-voltage characteristic of a single nanorod heterojunction of choice. The influence of ZnO growth parameters and post-growth treatment of ZnO/SiC structures are studied with the aim to minimize the density of structural/interfacial defects and to create lowdimensional hybrid heterojunctions with the potential to show intense UV electroluminescence.

Optical spectroscopy of wide-band-gap semiconductors: Raman and photoluminescence of gallium nitride, zinc oxide and their nanostructures

Dissertation Abstracts International, 2006

v were thermal annealed under different ambient conditions and their photoluminescence were collected after each annealing processes. The observed change in photoluminescence strongly suggests that positively charged impurity ions or interstitial Zn ions are the recombination centers for green luminescence observed in the present sample. A model based on the interplay between the band bending at the surface and the migration of positively charged impurity ions or Zn ions was proposed, which satisfactorily explains the observed photoluminescence. Raman scattering was performed to study the aligned GaN nanorods grown by plasma-assisted molecularbeam epitaxy. It was determined from the E 2 peak that the GaN nanorods are relatively strain free. The free carrier concentration, as well as electron mobility was obtained by the line shape analysis of the coupled A 1 (LO) phonon plasmon mode for the first time for semiconductor nanostructures. Since the position of the LO phonon peak was found to be dependent on both the temperature and the LO phonon-plasmon coupling, special attention has been paid to exclude the temperature-induced peak shift. The local temperature of the nanorod sample was estimated based on the ratio of Stokes to anti-Stokes Raman peak intensity. GaN MISFET with re-grown by selected area MOVPE n + layer has been analyzed by micro-Raman and micro-PL. The material properties were extracted by using both spectroscopies. vi ACKNOWLEDGEMENTS The author would like to extend his deepest thanks to Dr. Minseo Park for his supervising this dissertation and being a great academic advisor during the author's graduate study in Auburn University. The author would like to thank Ms. Hee Won Seo and Mr. An-jen Cheng for their contributions on the thermal CVD system and the growth of ZnO nanostructures. The author would like to thank Mr. N. Sathitsuksanoh for helping with XRD experiment.

Piezopotential Properties in Nanowire devices of ZnO

Polarization of ions in a crystal that has non-central symmetry, a piezoelectric potential (piezopotential) is created in the crystal by applying a stress. For materials such as ZnO, GaN, and InN in the wurtzite structure family, the effect of piezopotential on the transport behavior of charge carriers is significant due to their multiple functionalities of piezoelectricity, semiconductor and photon excitation. By utilizing the advantages offered by these properties, a few new fields have been created. Electronics fabricated by using innercrystal piezopotential as a ''gate'' voltage to tune/control the charge transport behavior is named piezotronics, with applications in strain/force/pressure triggered/controlled electronicdevices, sensors and logic units. Piezo-phototronic effect is a result of three-way couplingamong piezoelectricity, photonic excitation and semiconductor transport, which allows tuningand controlling of electro-optical processes by strain induced piezopotential. The objective of this review article is to introduce the fundamentals of piezotronics and piezo-phototronics and to give an updated progress about their applications in energy science and sensors.