Channeling contrast microscopy of epitaxial lateral overgrowth of ZnO/GaN films (original) (raw)

As a wide band gap (3.37 eV) semiconductor, ZnO is of great interest for applications in opto-and nano-electronics, as technologies of synthesis for ZnO layers are developed. It has been reported that the blue-UV generation can be realized in ZnO thin-films, ZnO whiskers, p-type ZnO films and thin-film diode structures at room temperature. Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a sapphire substrate. The density of dislocations can be decreased by orders of magnitude using epitaxial lateral overgrowth (ELO), which employs a SiO 2 mask layer to act as a stop layer for dislocations in so called wing areas.