Low-power multi-GHz and multi-Gb/s SiGe BiCMOS circuits (original) (raw)
2000, Proceedings of the IEEE
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2002
In this paper, we present the design of an integrated low noise amplifier (LNA) for WLAN applications in the 6 GHz range using a low complexity SiGe BiCMOS technology. The SiGe HBTs used In the design feature a typical cut-off frequency "Ft" of 45 GHz and a typical maximum oscillation frequency "Fmax" of 60 GHz The LNA exhibits a 17 dB power gain with a 1.4 GHz bandwidth and a noise figure lower than 2.5 dB. The 1 dB compression point Is -18 dBm and the third order intercept point referred to the input is -7 dBm. We have furthermore observed a good accuracy between simulations and measurements. Finally, we have defined a new figure of merit involving the noise measure and the DC power consumption that shows that our design features a performance at the state of the art.
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