Memristor: From Basics to Deployment (original) (raw)
Related papers
Journal of Low Power Electronics and Applications
Circuit or electronic components are useful elements allowing the realization of different circuit functionalities. The resistor, capacitor and inductor represent the three commonly known basic passive circuit elements owing to their fundamental nature relating them to the four circuit variables, namely voltage, magnetic flux, current and electric charge. The memory resistor (or memristor) was claimed to be the fourth basic passive circuit element, complementing the resistor, capacitor and inductor. This paper presents a review on the four basic passive circuit elements. After a brief recall on the first three known basic passive circuit elements, a thorough description of the memristor follows. Memristor sparks interest in the scientific community due to its interesting features, for example nano-scalability, memory capability, conductance modulation, connection flexibility and compatibility with CMOS technology, etc. These features among many others are currently in high demand on...
Circuit Element with Memory-Memristor
2016
This paper presents a review about the emerging technology of the fourth basic circuit element named memristor. A memristor is two terminal element postulated by Leon Chua in 1971 as the fourth fundamental circuit element, along with the three classic circuit elements known as resistor, inductor and capacitor. A memristor is the resistor with memory whose resistance be governed by the magnitude, direction and duration of the voltage applied. A physical memristor was built at HP Laboratories led by Stanley Williams by nano-scale titanium dioxide thin film, consists of two doped and undoped regions, sandwiched between two platinum contacts in 2008. A memristor is a non-volatile memory device which has the capacity to replace flash memories and DRAMs in the coming years. A huge amount of research is carried out for the better modelling of the device and realising more practical applications of the memristor.
Overview of Memristor based devices and circuits
The fourth fundamental circuit element-Memristor, was mathematically predicted by Prof. Leon Chua in his seminal research paper in IEEE Transaction on Circuit Theory on the symmetric background. After four decade in 2008, researchers at the Hewlett-Packard (HP) laboratories reported the development of a new basic circuit element that completes the missing link between charge and flux linkage, which was postulated by Chua. The new roadmap in the field of circuit designing, soft computing, memory technology and neuromorphic applications are emerged out very quickly in scientific community due to memristor. However the commercial device level memristor is not realized and reported in the literature until now. This paper overviews the some of the pioneer and state of art development in the view of memristor. The criticism constrains about memristor in scientific fraternity are also discussed.
Memristor − the fourth fundamental passive electronic component and its memory interpretation
J3eA
This paper aims to present to master students in electronics the recently discovered fourth basic passive circuit element − called memristor − and to better understand how the history memory of the already passed charge through it is taken into account in its I-V characteristic. In this attempt, a simple coupling device between 2 RC cells is investigated. Our calculations are in very good agreement with experiments on SPICE and Matlab softwares.
A Review on Memristor Applications
2017
Current discovery of the memristor has sparked a new wave of enthusiasm and optimism that has resulted in revolutionizing circuit design. Memristive devices are potential elements for nanoelectronics applicable in nonvolatile memory and storage, defect-tolerant circuitry and neuromorphic computing. We present its main applications in the circuit design and computer technology, together with future developments.
DESCRIPTION Typically electronics has been defined in terms of three fundamental elements such as resistors, capacitors and inductors. These three elements are used to define the four fundamental circuit variables which are electric current, voltage, charge and magnetic flux. Resistors are used to relate current to voltage, capacitors to relate voltage to charge, and inductors to relate current to magnetic flux, but there was no element which could relate charge to magnetic flux. To overcome this missing link, scientists came up with a new element called Memristor. These Memristor has the properties of both a memory element and a resistor (hence wisely named as Memristor). Memristor is being called as the fourth fundamental component, hence increasing the importance of its innovation. Its innovators say ―memrisrors are so significant that it would be mandatory to re-write the existing electronics engineering textbooks.‖
Fabrication and testing of memristive devices
The 2010 International Joint Conference on Neural Networks (IJCNN), 2010
As semiconductor devices have shrunk further into the nanoscale regime, a new device, the memristor, has been discovered that has the potential to transform neuromorphic computing systems. This device is considered as the fourth fundamental circuit element. It was first theorized by Dr. Leon Chua in 1971 and has been discovered by HP labs in 2008. This paper describes initial efforts at fabricating the memristor devices and examining their properties. Two versions of memristor devices have been fabricated at the University of Dayton and the Air Force Research Laboratory utilizing varying thicknesses of the Ti02 dielectric layers. Our results show that the devices do exhibit the characteristic hysteresis loop in their I-V plots. Further refinement in the devices to achieve stronger hysteresis will be carried out as future work.
Multi-State Memristors and Their Applications: An Overview
IEEE Journal on Emerging and Selected Topics in Circuits and Systems
Memristors show great potential for being integrated into CMOS technology and provide new approaches for designing computing-in-memory (CIM) systems, brain-inspired applications, trimming circuits and other topologies for the beyond-CMOS era. A crucial characteristic of the memristor is multi-state 1 switching. Memristors are capable of representing information in an ultra-compact fashion, by storing multiple bits per device. However, certain challenges remain in multistate memristive circuits and systems design such as device stability and peripheral circuit complexity. In this paper, we review the state of the art of multi-state memristor technologies and their associated CMOS/Memristor circuit design, and discuss the challenges regarding device imperfection factors, modelling, peripheral circuit design and layout. We present measurement results of our in-house fabricated multi-state memristor as an example to further illustrate the feasibility of applying multistate memristors in CMOS design, and demonstrate their related future applications such as multi-state memristive memories in machine learning, memristive neuromorphic applications, trimming and tuning circuits, etc. In the end, we summarize past and present efforts done in this field and envisage the direction of multi-state memristor related research.
Memristor - The fictional circuit element
2018
The memory resistor abbreviated memristor was a harmless postulate in 1971. In the decade since 2008, a device claiming to be the missing memristor is on the prowl, seeking recognition as a fundamental circuit element, sometimes wanting electronics textbooks to be rewritten, always promising remarkable digital, analog and neuromorphic computing possibilities. A systematic discussion about the fundamental nature of the device is almost universally absent. This report investigates the assertion that the memristor is a fundamental passive circuit element, from the perspective that electrical engineering is the science of charge management. With a periodic table of fundamental elements, we demonstrate that there can only be three fundamental passive circuit elements. The ideal memristor is shown to be an unphysical active device. A vacancy transport model further reveals that a physically realizable memristor is a nonlinear composition of two resistors with active hysteresis.