Low Temperature Operation as a Tool to Investigate Second Order Effects in Submicron MOSFET's (original) (raw)

Low Temperature Operation as a Tool to Investigate Second Order Effects in Submicron MOSFET's

Abstract

In this paper the electrical performance of submicron MOS transistors at low temperatures is explored. This way we found that second-order effects like; the bias dependent series resistance, the second substrate current hump and some others, are amplified allowing so an easier way to study them and to determine their physical origin.

Edmundo Gutierrez hasn't uploaded this paper.

Let Edmundo know you want this paper to be uploaded.

Ask for this paper to be uploaded.