Pinch off of nanopipes under electron irradiation in GaN (original) (raw)

In-situ electron beam irradiation of nanopipes in GaN

Frédéric Pailloux

EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany, 2008

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Nanopipes in GaN: photo-etching and TEM study

Sorin Lazar

The European Physical Journal Applied Physics, 2004

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Dislocation density in GaN determined by photoelectrochemical and hot-wet etching

Michael Reshchikov

Applied Physics Letters, 2000

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Dissociation of the 60° basal dislocation in wurtzite GaN

Ph. Komninou

physica status solidi (c), 2012

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Mixed partial dislocation core structure in GaN by high resolution electron microscopy

George Dimitrakopulos, Joseph Kioseoglou

Physica Status Solidi (a), 2006

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Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

Achim Trampert

Physical Review B, 2010

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Screw Dislocations in GaN Grown by Different Methods

Jacek Jasinski

Microscopy and Microanalysis, 2004

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Atomic structures and energies of partial dislocations in wurtzite GaN

Ph. Komninou, Theodoros Karakostas, George Dimitrakopulos, Joseph Kioseoglou

Physical Review B, 2004

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Charge accumulation at a threading edge dislocation in gallium nitride

Ellen Stechel

Applied Physics Letters, 1999

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Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN

Ben Hourahine

Microscopy and Microanalysis, 2014

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Atomic core configurations of the -screw basal dislocation in wurtzite GaN

Ph. Komninou

Journal of Crystal Growth, 2007

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Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope

Steven Denbaars

Journal of Applied Physics, 2003

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White X-ray microdiffraction analysis of defects, strain and tilts in a free standing GaN film

Rozaliya I Barabash

physica status solidi (b), 2008

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Transmission electron microscopy of GaN layers grown by ELO and micro - ELO techniques

Andrew Steckl

physica status solidi (c), 2005

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On the atomic structures, mobility and interactions of extended defects in GaN: dislocations, tilt and twin boundaries

antoine bere

Philosophical Magazine, 2006

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Atomic structure and energy of threading screw dislocations in wurtzite GaN

antoine bere

physica status solidi (c), 2005

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Electronic structure of 1/6〈202¯3〉 partial dislocations in wurtzite GaN

Philomela Komninou

Journal of Applied Physics, 2011

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Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes

Alexander Satka

Journal of Crystal Growth, 2017

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Hexagonal-based pyramid void defects in GaN and InGaN

Vitaliy Avrutin

Journal of Applied Physics, 2012

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Dislocation core structures in Si-doped GaN

Wai Yuen Fu

Applied Physics Letters, 2015

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Partial dislocations in wurtzite GaN

George Dimitrakopulos, Hariton Polatoglou, Joseph Kioseoglou

Physica Status Solidi (a), 2005

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Investigation of the atomic structure of the pure edge and a+c threading dislocations in gan layers grown by MBE

Valerie Potin

Materials Science and Engineering: B, 1999

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TEM investigation of defect reduction and etch pit formation in GaN

Roland Kröger

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Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers

Rozaliya I Barabash

physica status solidi (a), 2006

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