Defect structure of silicon crystals implanted with H 2 + ions (original) (raw)

X-ray scattering study of hydrogen implantation in silicon

Francois RIEUTORD

Journal of Applied Physics, 2006

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A Comparative Analysis of Structural Defect Formation in Si+ Implantedand then Plasma Hydrogenated and in H+ Implanted Crystalline Silicon

Alexander Ulyashin

Solid State Phenomena, 2008

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A Comparative Analysis of Structural Defect Formation in Si+ Implanted and then Plasma Hydrogenated and in H+ Implanted Crystalline Silicon

Alexander Ulyashin

Solid State Phenomena, 2008

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Formation of hydrogen complexes in proton implanted silicon and their influence on the crystal damage

Wolfgang Ensinger

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 2006

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Accumulation of Hydrogen within Implantation-Damaged Areas in Processed Si:N and Si:O

Alexander Ulyashin

Solid State Phenomena, 2009

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Influence of high pressure and temperature on defect structure of silicon crystals implanted with N or Si ions

Leszek Bryja

Journal of Alloys and Compounds, 2004

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Study of defects in the near-surface layer created in silicon by H2+ or He+ implantation

Irina Antonova

Vacuum, 2007

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Hydrogen-Related Complexes as the Stressing Species in High-Fluence, Hydrogen-Implanted, Single-Crystal Silicon

Mariano Anderle

Physical Review B, 1992

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Evidence for ion irradiation induced dissociation and reconstruction of Si–H bonds in hydrogen-implanted silicon

J K Lee

Applied Physics Letters, 2008

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Defect-related diffusion of hydrogen in silicon

Irina Antonova

Physica B: Condensed Matter, 2003

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DLTS and EPR study of defects in H implanted silicon

Hrvoje Zorc, Boris Rakvin

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002

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The Temperature Evolution of the Hydrogen Plasma Induced Structural Defects in Crystalline Silicon

Alexander Ulyashin

Solid State Phenomena, 2008

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Hydrogen-Implantation-Induced Damage in Silicon

Eero Rauhala

1987

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Transmission electron microscopy study of hydrogen defect formation at extended defects in hydrogen plasma treated multicrystalline silicon

Alexander Ulyashin

Journal of Applied Physics, 2009

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AFM studies of hydrogen implanted silicon

Jacek Jagielski

Applied Surface Science, 1999

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Damage accumulation in hydrogen-implanted silicon

Jonathan Leach

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986

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On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies

Nikolay Cherkashin

Journal of Applied Physics, 2010

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The interaction of hydrogen with deep level defects in silicon

Jonathan Goss

Solid State …, 1999

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Hydrogen gettering at buried defect layers in ion-implanted silicon by plasma hydrogenation and annealing

Alexander Ulyashin

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

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Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon

Martin Chicoine

2007

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Transformation of Structural Defects and The Hydrogen State Upon Heat Treatment of Hydrogenated Silicon

Anis Saad

Journal of Applied Spectroscopy

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Silicon interstitials generation during the exposure of silicon to hydrogen plasma

Giorgio Ottaviani

Materials Science and Engineering: B, 1996

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Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

R. Fortunier

Journal of Applied Physics, 2008

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Investigation of hydrogen implantation-induced blistering in SiGe

Silke Christiansen

Materials Science and Engineering: B, 2005

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Out-diffusion of hydrogen from hydrogen plasma-processed oxygen-implanted silicon

Alexander Ulyashin

Applied Surface Science, 2012

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On the microstructure of Si coimplanted with H[sup +] and He[sup +] ions at moderate energies

N. Cherkashin

Journal of Applied Physics, 2010

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Impact of He and H relative depth distributions on the result of sequential He + and H + ion implantation and annealing in silicon

Nabil Daghbouj

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Effect of the order of He1 and H1 ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Nabil Daghbouj

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Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Nikolay Cherkashin

Journal of Applied Physics, 2016

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Platelet defects in hydrogen implanted silicon

Simon Romani

Nuclear Instruments and Methods in Physics …, 1990

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Substrate orientation, doping and plasma frequency dependencies of structural defect formation in hydrogen plasma treated silicon

Alexander Ulyashin

Journal of Physics: Condensed Matter, 2002

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Hydrogen implantation-induced defects in bulk Si studied by Raman spectrometry

Ian Cayrefourcq

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006

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