Computer-aids for analysis and scaling of extrinsic devices (original) (raw)

International Electron Devices Meeting, 1984

Abstract

Although intrinsic effects have been successfully modeled using computer analysis, the capability to characterize and predict extrinsic effects has lagged behind. Scaling of VLSI now requires coordinated analysis of all resistive, capacitive, and parasitic devices-especially those associated with isolation and CMOS well structures. This paper addresses the problem of intrinsic devices imbedded in a complete technology framework including parasitics. Results

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