Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN (original) (raw)

Channeling as a mechanism for dry etch damage in GaN

Steven Denbaars

Applied Physics Letters, 2000

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A study of reactive ion etching damage effects in GaN

Maan Alkaisi

Microelectronic Engineering, 2001

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Plasma-induced damage study for n-GaN using inductively coupled plasma reactive ion etching

vipan kumar

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001

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Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy

Caleb Glaser

Journal of Applied Physics, 2019

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Photoluminescence-excitation spectroscopy as a highly sensitive probe for carrier transport processes affected by surface damages in AlxGa1-xN/GaN heterostructures

Masaaki Nakayama

Journal of Applied Physics, 2007

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Implantation damage formation in a-, c- and m-plane GaN

Norberto Catarino

Acta Materialia, 2017

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High-Density Plasma-Induced Etch Damage of GaN

F. Ren

MRS Proceedings, 1999

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Swelling or erosion on the surface of patterned GaN damaged by heavy ion implantation

Sha Yan

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 2010

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Dislocation density in GaN determined by photoelectrochemical and hot-wet etching

Michael Reshchikov

Applied Physics Letters, 2000

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Cathodoluminescence mapping and selective etching of defects in bulk GaN

Huicong Hong

Journal of Crystal Growth, 2006

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Single and molecular ion irradiation-induced effects in GaN: experiment and cumulative MD simulations

Flyura Djurabekova

Journal of Physics D: Applied Physics, 2017

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Carrier recombination and diffusion in GaN revealed by transient luminescence under one-photon and two-photon excitations

S. Juršėnas

Applied Physics Letters, 2006

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Effect of Photo-Assisted RIE Damage on GaN

Leonard Trombetta

MRS Internet Journal of Nitride Semiconductor Research, 2003

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Cathodoluminescence studies of the electron injection-induced effects in GaN

Andrei Osinsky, Mikhail Klimov

Applied Physics Letters, 2003

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Deep levels in KOH etched and MOCVD regrown GaN p-n junctions

H. Morkoç

physica status solidi (c), 2005

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Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN

giancarlo Salviati

Physica Status Solidi (a), 1999

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Defect formation near GaN surfaces and interfaces

Leonard Brillson

1999

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Luminescence properties of defects in GaN

Michael Reshchikov

Journal of Applied Physics, 2005

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Peculiarities of the current-voltage and capacitance-voltage characteristics of plasma etched GaN and their relevance to n-GaN Schottky photodetectors

shailesh khamari

Journal of Applied Physics, 2018

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Highly selective photoenhanced wet etching of GaN for defect investigation and device fabrication

H. Morkoç

MRS Proceedings, 2000

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Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature

Kenji Ishikawa

Aip Advances, 2012

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Photoluminescence and Excitation Spectra of Deep Defects in GaN

Hadis Morkoç

MRS Proceedings, 2001

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An evidence of defect gettering in GaN

Abdul Majid

Physica B: Condensed Matter, 2008

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Atomistic simulation of damage production by atomic and molecular ion irradiation in GaN

Antti Kuronen

Journal of Applied Physics, 2012

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Direct evidence of N aggregation and diffusion in Au[sup +] irradiated GaN

Rodney C Ewing

Applied Physics Letters, 2006

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Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN

Ben Hourahine

Microscopy and Microanalysis, 2014

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Identification of subsurface damage in freestanding HVPE GaN substrates and its influence on epitaxial growth of GaN epilayers

Neeraj Tripathi

Journal of Crystal Growth, 2007

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RBS/Channeling and TEM Study of Damage Buildup in Ion Bombarded GaN

R. Ratajczak

Acta Physica Polonica A, 2011

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