N-face high electron mobility transistors with a GaN-spacer (original) (raw)
Influence of device dimension and gate recess on the characteristics of AlGaN/GaN high electron mobility transistors
jae kyoung mun
Microwave and Optical Technology Letters, 2012
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Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers
Indrajit Bhattacharya
2012
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Theoretical model of transport characteristics of AlGaN/GaN high electron mobility transistors
Asghar Asgari
2005
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AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
Toshiaki MATSUI
Applied Physics Express, 2008
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Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors
B. Grimbert
Applied Physics Express, 2011
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AlGaN Channel High Electron Mobility Transistors with Ultra-Low Drain-Induced-Barrier-Lowering Coefficient
Umesh Shivam Mishra
Chinese Physics Letters, 2013
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Numerical investigation of the performance of AlGaN/GaN/BGaN double-gate double-channel high electron mobility transistor
International Journal of Electrical and Computer Engineering (IJECE)
International Journal of Electrical and Computer Engineering (IJECE), 2022
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Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts
Mudassar Meer
Solid-State Electronics, 2016
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Study of the n + GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance
Steven Denbaars
Japanese Journal of Applied Physics, 2007
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Fabrication and Characterization of Thin-Barrier AlGaN/AlN/GaN HEMTs
Martin Fagerlind
IEEE Electron Device Letters, 2011
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Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs
Ozlem Sen
Semiconductor Science and Technology, 2018
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Electron confinement enhancement in AlGaN/AlN/GaN HEMT using BGaN buffer
Malek Gassoumi
Journal of Ovonic Research
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AlGaN/GaN high electron mobility transistors on Si(111) substrates
H. Lahreche
IEEE Transactions on Electron Devices, 2001
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AlGaN/GaN Heterostructures in High Electron Mobility Transistors
Vladimir Popok
2018
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DC AND RF CHARACTERISTIC OF HIGH-ELECTRON-MOBILITY TRANSISTOR ( HEMT ) ON AlGaN / GaN / Si FOR POWER APPLICATIONS
Malek Gassoumi
2017
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Gate Length Scaling Effect on High-Electron Mobility Transistors Devices Using AlGaN/GaN and AlInN/AlN/GaN Heterostructures
Liann-Be Chang
Journal of Nanoscience and Nanotechnology, 2014
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Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review
Muhaimin Haziq
Micromachines
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GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
Subrata Halder
Applied Physics Letters, 2005
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Optimization of AlGaN/GaN HEMTs for high frequency operation
Arpan Chakraborty
physica status solidi (a), 2006
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New AlGaN/GaN High Electron Mobility Transistors Employing Charge Accumulation in Multiple Al 2 O 3 /Ga 2 O 3 Stacks
Minwoo Ha
Japanese Journal of Applied Physics, 2012
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0.25 muhboxm\mu\hbox{m}muhboxm Self-Aligned AlGaN/GaN High Electron Mobility Transistors
Anirban Basu
IEEE Electron Device Letters, 2008
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AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement
Kei Lau
IEEE Electron Device Letters, 2000
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Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
Engin Arslan
Journal of Applied Physics, 2009
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High electron mobility transistors based on the AlN/GaN heterojunction
Katerina Tsagaraki, Adikimenakis Adam
Microelectronic Engineering, 2009
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Graded barrier AlGaN/AlN/GaN heterostructure for improved 2-dimensional electron gas carrier concentration and mobility
Raju Halder
Electronic Materials Letters, 2014
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