Dependence on the Schottky metai and crystal orientation of the Schottky diode characteristics of aMSiC single crystals grown by chemical vapor deposition (original) (raw)

J Appl Phys, 1988

Abstract

The effects of Schottky metal and the Si substrate orientation on the characteristics of beta-SiC Schottky diodes was investigated using Schottky barrier contacts make on beta-SiC single crystals grown by CVD. It was found that the Schottky diodes of Au and Pt films produced by evaporation on Si(611), Si(411), and Si(111) showed excellent characteristics compared with the conventional Schottky diodes of the films on Si(100). The barrier height varies with the Si substrate orientation and is larger for the larger work function metal Pt than for Au.

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