Crystalline effects on Auger and photoelectron emission from clean and Cs-covered GaAs(110) surfaces (original) (raw)
1992, Applied Surface Science
Angular-resolved Auger electnm spectroscopy IARAES) and X-ray photoelectron diffraction (XPD) are applied to the slructural study of (i) cleaved or (ii) sputter-processed GaAs (lie; surface and of lid) the Cs/GaAs interface. Experimental diffraclit)n patterns uf Gn and As high-energy Auger electrons are compared To the theoretical angular distribution calculated in the slngle-scattering, sphericabwave approximation, and with the XPD patterns. The observed crystalline effects in the Auger speclra of the clean surface are discussed in terms of the relative importance of processes related to ingoing and outgoing eleclrons, The orientational dependence of the back-scattering factor is also taken into account and its contribution to the observed c~stallographic anisotropy is e~-aluated, As an example, we report an investigation of the ion-induced surface damag-nn the ~110) cleaved surface processed wilh At* beams eft various energies. ARAES characterizalion fc Ihe Cs/GaAs (1111) interface is also reported, No disruption of the substrate is delected at low coverages, while significant intermixing occurs at Cs saturation.
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