Ge[sub 1−x]Sn[sub x] alloys pseudomorphically grown on Ge(001) (original) (raw)

Determination of the optical energy gap of Ge[sub 1−x]Sn[sub x] alloys with 0<x<0.14

Angel G Rodriguez, Miguel A Vidal

Applied Physics Letters, 2004

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Ge1−xSnx alloys pseudomorphically grown on Ge(001)

Hugo Navarro

Applied Physics Letters, 2003

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Nonlinear behavior of the energy gap in Ge[sub 1−x]Sn[sub x] alloys at 4 K

Angel G Rodriguez, Miguel A Vidal

Applied Physics Letters, 2007

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Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys

Detlev Grützmacher

ACS Photonics, 2015

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Measurement of the direct energy gap of coherently strained Sn[sub x]Ge[sub 1−x]/Ge(001) heterostructures

Regina Ragan

Applied Physics Letters, 2000

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GROWTH AND CHARACTERIZATION OF GE1-XSNX ALLOYS GROWN ON GE (001) AND GAAS (001) Superficies y vacío, Diciembre, año/vol. 17, número 004 …

Miguel Angel Vidal

redalyc.uaemex.mx

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Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001)

Matthew Wormington

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014

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Strain and Band-Gap Engineering in Ge - Sn Alloys via P Doping

Rüdiger Schmidt-Grund

Physical Review Applied, 2018

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Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials

Pairot Moontragoon

Semiconductor Science and Technology, 2007

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Optical critical points of thin-film Ge_ {1− y} Sn_ {y} alloys: A comparative Ge_ {1− y} Sn_ {y}∕ Ge_ {1− x} Si_ {x} study

Jose Menendez

Physical Review B, 2006

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Electronic properties calculation of Ge 1− x− y Si x Sn y ternary alloy and nanostructure

Pichitpon Pengpit

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Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys

José Menéndez

Solid-State Electronics, 2015

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Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%

Hameed Naseem

Journal of Electronic Materials, 2015

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Alloy Stability of Ge1−xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy

Daniel Schwarz

Journal of Electronic Materials, 2020

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Structural Property Study for GeSn Thin Films

Detlev Grützmacher

Materials

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Measurement of the direct energy gap of coherently strained SnxGe1–x/Ge (001) heterostructures

Regina Ragan

2000

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Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing

Rüdiger Schmidt-Grund

Journal of Applied Physics, 2019

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The two gap transitions in Ge1−xSnx: Effect of non-substitutional complex defects

Rafael Barrio

Journal of Applied Physics, 2016

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Electronic band structure and effective mass parameters of Ge1-xSnx alloys

Kain Lu Low

Journal of Applied Physics, 2012

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Determination of the optical energy gap of Ge1−xSnx alloys with 00.14

Miguel Angel Vidal

Applied Physics Letters, 2004

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Molecular-beam epitaxial growth of metastable Ge1−x Sn x alloys

James Piao

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1990

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Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%

Sylvester Amoah

Materials, 2021

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Non-substitutional Sn Defects in Ge1−x Sn x Alloys for Opto- and Nanoelectronics

Rafael Barrio

Journal of Superconductivity and Novel Magnetism, 2012

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Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth

Sattar Al-kabi

Scientific reports, 2018

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Tensely strained GeSn alloys as optical gain media

Stefano Chiussi

Applied Physics Letters, 2013

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Theoretical characterization and band gap tuning of Sn x (GeSe 2 ) 100-x thin films

Riadh Neffati

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Photovoltage spectroscopy of direct and indirect bandgaps of strained Ge1-Sn thin films on a Ge/Si(001) substrate

huong tran

Acta Materialia, 2019

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Wave-function engineering and absorption spectra in Si0.16Ge0.84/Ge0.94Sn0.06/Si0.16Ge0.84strained on relaxed Si0.10Ge0.90type I quantum well

Sfina Noureddine

Journal of Applied Physics, 2014

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Sn-alloying as a means of increasing the optical absorption of Ge at the C - and L -telecommunication bands

Radek Roucka

Semiconductor Science and Technology, 2009

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