In-plane and out-of-plane lattice parameters of [11n] epitaxial strained layers (original) (raw)

X-ray investigation of thick epitaxial GaAs/InGaAs layers on Ge pseudosubstrates

Aaliya Khan

2005

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Epitaxial Growth of Strained Ge Films on GaAs(001)

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Nonlinear dependence of X-ray diffraction peak broadening in InxGa1−xSb epitaxial layers on GaAs substrates

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Spatially resolved X-ray diffraction as a tool for strain analysis in laterally modulated epitaxial structures

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Critical thickness of Ge/GaAs (001) epitaxial films

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Journal of Applied Physics, 1999

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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1998

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III-V Compound Substrate and Epitaxial Layer Characterization by Divergent X-Ray Beam Diffraction

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1973

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Microscopic structure of strained heterostructures

Faustino Martelli

Solid-State Electronics, 1996

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giancarlo Salviati

Mikrochimica Acta, 1994

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Optical study of strained and relaxed epitaxial InxGa1−xAs on GaAs

Claudio Ferrari

Journal of Applied Physics, 1995

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Study of structure and intrinsic stresses of Ge thin films on GaAs

Peter Lytvyn

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Investigation of strain-symmetrized and pseudomorphic Si(m)Ge(n) superlattices by x-ray reciprocal space mapping

Erich Kasper

J Appl Phys, 1994

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Atomic-resolution study of lattice distortions of buriedInxGa1−xAsmonolayers in GaAs(001)

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Physical Review B, 1999

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Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

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Determination of lattice parameters in the epitaxial system by high resolution X-ray diffraction

Claudio Ferrari

Journal of Crystal Growth, 1996

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DAFS Study of Strained III-V Epitaxial Semiconductors

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In situReal-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms

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Evolution of epilayer tilt in thick In x Ga 1−x As metamorphic buffer layers grown by hydride vapor phase epitaxy

Thomas Kuech

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Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100),(110), and (111) A GaAs substrates

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Structure of Fe3Si∕GaAs(001) epitaxial films from x-ray crystal truncation rods

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Application of high-resolution X-ray diffractornetry to the structural study of epitaxial multilayers on novel index surfaces

Claudia Villar

Microelectronics Journal, 1997

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Rocking Curve Imaging Studies of Laterally Overgrown GaAs and GaSb Epitaxial Layers

Z. Zytkiewicz

Acta Physica Polonica A, 2009

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Synchrotron X-ray topography study of defects in epitaxial GaAs on high-quality Ge

Patrick McNally

Nuclear Instruments and Methods in Physics Research, 2006

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Peculiarities of strain relaxation in linearly graded In x Ga 1−x As/GaAs(001) metamorphic buffer layers grown by molecular beam epitaxy

Мария Яговкина

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X-ray diffraction analysis for step and linearly graded InxGa1−xAs/GaAs (001) heterostructures using various hkl reflections

Fahad A Althowibi

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2016

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Strain relaxation of GaAs/Ge crystals on patterned Si substrates

Alfonso Gonzalez Taboada

Applied Physics Letters, 2014

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