Modeling of a 4-18GHz 6W flip-chip integrated power amplifier based on GaN HEMTs technology (original) (raw)
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Power and thermal design criteria of AlGaN/GaN cascode cell for wideband distributed power amplifier
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008
This paper deals with non-linear modeling of power GaN HEMT and design of power balanced cascode cell for wideband distributed power amplifiers. The active device is a 8x50µm AlGaN/GaN HEMT grown on SiC substrate. The cascode die is flip-chipped onto an AlN substrate via electrical and mechanical bumps. This GaN-based cascode cell is dedicated to act as the unit power device within a broad-band capacitivelycoupled 4-18GHz distributed amplifier.
Design of GaN-based balanced cascode cells for wide-band distributed power amplifier
2007 European Microwave Integrated Circuit Conference, 2007
This paper reports on the design of a cascode GaN HEMT cell dedicated to 4-18GHz flip-chip distributed power amplifier. The active device is a 8x50µm AlGaN/GaN HEMT grown on SiC substrate. The GaN-based die which integrates the active cascode cell and its matching elements is flip-chipped via electrical bumps onto an AlN substrate. The matching elements of the balanced cascode cell are composed of series capacitances on the gate of both transistors with additional resistances to insure stability and bias path. The series capacitor on the gate of the 1 st transistor is added for the distributed amplifier optimisation while the series capacitor on the gate of the 2 nd transistor is dedicated to the power balance of the cascode cell.
2015
– A specific design of a GaN HEMT cascode cell dedi-cated to flip-chip distributed power amplifiers is presented in this paper. The active device used in the design is a 8x50μm Al-GaN/GaN HEMT grown on SiC substrate. The GaN-based die which integrates the active cascode cell and its passive matching elements is flip-chipped onto an AlN substrate via electrical and mechanical bumps. The matching elements of the cascode cell are composed of series capacitors on the gate of both transistors with additional resistors to insure stability and bias path. The se-ries capacitor on the gate of the 1st transistor is added to enable the power optimization of wideband distributed amplifiers up to their maximum frequency while the series capacitor on the gate of the 2nd transistor is dedicated to the intrinsic power balance of the cascode cell. Index Terms – Gallium nitride, HEMTs, Balanced cascode cell, Distributed amplifier, Power amplifier, Flip-chip.
Balanced AlGaN/GaN HEMT cascode cells: design method for wideband distributed amplifiers
Electronics Letters, 2008
A specific design of a GaN HEMT cascode cell dedicated to flip-chip distributed power amplifiers is presented in this paper. The active device used in the design is a 8x50μm Al-GaN/GaN HEMT grown on SiC substrate. The GaN-based die which integrates the active cascode cell and its passive matching elements is flip-chipped onto an AlN substrate via electrical and mechanical bumps. The matching elements of the cascode cell are composed of series capacitors on the gate of both transistors with additional resistors to insure stability and bias path. The series capacitor on the gate of the 1 st transistor is added to enable the power optimization of wideband distributed amplifiers up to their maximum frequency while the series capacitor on the gate of the 2 nd transistor is dedicated to the intrinsic power balance of the cascode cell.
High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates
IEEE Transactions on Microwave Theory and Techniques, 2001
Broad-band high-power cascode AlGaN/GaN high electron-mobility transistor monolithic-microwave integrated-circuit (MMIC) amplifiers with high gain and power-added efficiency (PAE) have been fabricated on high-thermal conductivity SiC substrates. A cascode gain cell exhibiting 5 W of power at 8 GHz with a small-signal gain of 19 dB was realized. A nonuniform distributed amplifier (NDA) based on this process was designed, fabricated, and tested, yielding a saturated output power of 3-6 W over a dc-8-GHz bandwidth with an associated PAE of 13%-31%. A broad-band amplifier MMIC using cascode cells in conjunction with a lossy-match input matching network showed a useful operating range of dc-8 GHz with an output power of 5-7.5 W and a PAE of 20%-33% over this range. The third-order intermodulation products of the amplifiers under two-tone excitation were studied and third-order-intercept values of 42 and 43 dBm (computed using two-tone carrier power) for the lossy match and NDA amplifiers were obtained.
GaN HEMT power amplifier design for 2.45 GHz wireless applications
SAIEE Africa Research Journal
Electronic devices with high performances like Power Amplifiers (PA) are very important for Wireless communications. This paper proposes a design of a class AB power amplifier operating at 2.45 GHz, in the S-band frequency. The Cree's CG2H40045F GaN HEMT (High Electron Mobility Transistor) is used for this design. The Gallium Nitride (GaN) technology has been chosen in light of its advantageous properties such as high breakdown voltage, high band gap, as well as high thermal conditions. The paper investigates the different design trade-offs for finding a good balance between various key parameters of the PA (linearity, efficiency, and gain). A design approach has been proposed and the microstrip lines based on the Smith Chart tool available in ADS software have been used for the matching process. The class AB was selected to reach a good agreement between linearity and efficiency, provided by this class. After various process applications from DC characterization to simulations, the proposed design achieves a power added efficiency more than 50% at power saturation with a gain of 15 dB in schematic simulation. The layout dimensions are 55.5 x 64.45 mm 2 on PCB technology.
A 2.469-2.69GHz AlGaN/GaN HEMT power amplifier for IEEE 802.16e WiMAX applications
2008
This paper presents a 2.469~2.69GHz AlGaN/GaN HEMT power amplifier for IEEE 802.16e WiMAX applications operating at E mode under a single supply of +6v. At the central frequency point, the power added efficiency (PAE) can achieve 96.37%, the small signal gain is 20.81dB, and the output power is 25.39dBm. The paper describes the circuit design in detail, then shows the simulation results and discusses about the simulation results. In the end, the paper concludes the design.
International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering, 1996
A suitable large signal design method of distributed power amplifiers, based on the optimum FET load requirement for high power operation, is proposed in this article. The gate and drain line characteristic admittances are determined, providing both the initial values and right directions for an optimum design. To validate the proposed design method, a FET amplifier demonstrator with a gate periphery of 1.2 mm has been manufactured at the Texas Instruments foundry. The MMIC distributed amplifier demonstrated an improved power density performance of 340 mW/mm over the 2-18-GHz frequency band associated with a minimum of 13% power-added efficiency and 24% drain efficiency at 1-dB compression in CW operation.
Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs
… Arsenide and Other …, 2005
In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 µm thick SiC substrate. The measured small-signal gain of the driver is 14 dB at 28.5 GHz and the measured output power is 28.6 dBm at 28 GHz. The power amplifier shows a measured small-signal gain of 10.7 dB at 25.5 GHz and output power of 34.1 dBm at 27 GHz. Both MMICs have a very good yield and performance for a first iteration design.