Channel/ferroelectric interface modification in ZnO non-volatile memory TFT with P(VDF-TrFE) polymer (original) (raw)

Channel/ferroelectric interface modification in ZnO non-volatile memory TFT with P(VDF-TrFE) polymer

Journal of Materials Chemistry, 2010

Abstract

We report on the fabrication of ZnO non-volatile memory thin-film transistors (NVM-TFTs) with 200 nm-thick poly(vinylidene fluoride/trifluoroethylene)[P(VDF-TrFE)] ferroelectric layer. The NVM-TFTs have been tested for the most optimum properties in respect of their memory ...

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