Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth (original) (raw)

Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth

Applied Physics Letters, 2005

Abstract

We investigate the influence of the initial stage of the thermal treatment during solid-phase epitaxial regrowth (SPER) on the electrical activation level of arsenic in self-amorphized silicon, both with respect to heating ramp-up rates and the use of low-temperature preanneals. ...

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