Errors in near-surface and interfacial profiling of boron and arsenic (original) (raw)

Applied Surface Science, 2004

Abstract

To get an insight in the diffusion behavior of dopants such as arsenic and boron after annealing and in particular their segregation characteristics towards the interface in oxide structures on silicon, it is necessary to probe the dopant profile with very high accuracy and depth resolution. Sputter depth profiling as employed in secondary ion mass spectrometry (SIMS) is frequently used

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