Nanometer Scale Complementary Silicon MOSFETs as Detectors of Terahertz and Sub-terahertz Radiation (original) (raw)
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2021
Terahertz (THz) commonly refers to a region of the electromagnetic spectrum with frequencies ranging between 0.1 to 10 THz (wavelengths of 3 mm to 30 μm). The technology available for detection and generation in this spectral region has been less developed than in the adjoining infrared and visible domains. For the astronomy community, THz observation provides information related to various phenomena including, for example, the study of cosmic microwave background radiation (CMBR), emission from proto-planetary disks, and planetary atmospheric remote sensing. Many molecules have emission and absorption spectral features in the THz regime whose observation provides the ability to extract information on chemical composition, abundances, and environmental conditions. Current detector technology utilized for THz astrophysics typically utilizes bolometers or kinetic inductance devices (KIDs) that must be cooled and are available in limited array size. Detectors that could be operated in ...
Electrical Parameters of Si n-Mosfet THz-Detector: Matching with External Amplifier
Siberian Journal of Physics, 2010
The influence of the external load resistance on voltage and current sensitivities of Si n-MOSFET THz detectors at radiation frequency ν=142 GHz is investigated. The noise level in the frequency band, which is needed for real-time imaging is specified. Investigated were transistors with the gate widths and lengths within 1×1 µm 2 and 20×20 µm 2 . It is shown that internal resistance and external load resistance form the divider, the parameters of which are important for matching with read-out devices.