Magnetic field induced gate leakage current in 65nm nMOS transistors (original) (raw)

Magnetic sensitivity modeling of dual gate MOS transistor

Indonesian Journal of Electrical Engineering and Computer Science, 2021

In this paper, the magnetic field effect on the carrier transport phenomenon in the double gate metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. This is done by exploring the Lorentz force and the behavior of a semiconductor subjected to a constant magnetic field. The magnetic field modulates the electrons position and density as well as the potential distribution in the case of silicon tunnel tunneling field-effects (FETs). This modulation impacts the device electrical characteristics such as ON current (ION), subthreshold leakage current (IOF), threshold voltage (VT), magneto-transconductance (gmm) and output magneto-conductance (gmDS). In addition, a hall voltage (VH) is induced and modulated by the magnetic field. It has been observed that this voltage influences the effective applied gate voltage. It has been observed that the threshold voltage variations induced by the magnetic field is of paramount importance and affects the device switching p...