Performance of amorphous and microcrystalline silicon pin solar cells under variable light intensity (original) (raw)

Effect of Illumination Intensity on Solar Cells Parameters

Energy Procedia, 2013

This work presents the influence of the irradiance intensity level on different parameters (ideality factor, saturation current, series resistance, shunt resistance…) of polycrystalline silicon solar cells. I-V characteristics of these cells were plotted with measurements done at room temperature, and were modeled using the single diode model. We find that the short circuit current, the photocurrent and the ideality factor increase linearly with the irradiation level intensity while the open circuit voltage and efficiency increase logarithmically. The fill factor increases slightly for low intensities, and then it decreases with higher intensities of irradiation. The saturation current increases exponentially. The series resistance remains invariant and the shunt resistance decreases linearly.

Effect of Intensity on Solar Cell Parameters of a Silicon Solar Cell

The effect of illumination intensity P in on the cell parameters of a silicon solar cell has been investigated based on one diode model. The variation of slopes of the I-V curves of a cell at short circuit and open circuit conditions with intensity of illumination in small span of intensity has been applied to determine the cell parameters, viz. shunt resistance R sh , series resistance R s , diode ideality factor n and reverse saturation current I 0 of the cell. The dependence of cell parameters on intensity has been investigated for a fairly wide illumination intensity range 15-180 mW/cm 2 of AM1.5 solar radiations by dividing this intensity range into a desirable number of small intensity ranges for measurements of the slopes of the I-V curves at short circuit and open circuit conditions. Initially R sh increases slightly with P in and then becomes constant at higher P in values. However, R s , n and I 0 all decrease continuously with P in , but the rate of decrease of each of these becomes smaller at higher P in values. Theoretical values of open circuit voltage V oc , curve factor CF and efficiency Z calculated using the cell parameters determined by the present method match well with the corresponding experimental values.

Effect of illumination intensity on cell parameters of a silicon solar cell

Solar Energy Materials and Solar Cells, 2010

Wide range temperature dependence of analytical photovoltaic cell parameters for silicon solar cells under high illumination conditions

Dependency of PV cell parameters on T has been investigated. The PV cell parameters analytically determined using single J-V curve. The analytically predicted values of R sh , R s and n decreased with increases of T. J 0 is increased by 3583% and 5988% under 10 and 15 suns, respectively. Relations between PV cell parameters and T have also been developed. g r a p h i c a l a b s t r a c t The temperature (T) dependence of the performance and cell parameters of photovoltaic (PV) Si solar cells was studied in the 298–353 K temperature range and under high illumination conditions (10 and 15 suns). The PV cell parameters were analytically predicted using the short circuit current density (J sc), and open circuit voltage (V oc), inverse of the slopes at short circuit and open circuit conditions along with the current density and voltage values at the maximum power point. When T was varied from 298 K to 353 K, the obtained variations of the performance parameters under illumination intensities of 10 and 15 suns were, respectively: J sc increased by 5.38% and 2.86%; V oc , on the other hand, decreased approximately by 16.87% and 17.75%; the obtained fill factor losses were 5.84% and 5.34%, and the overall losses in efficiency were approximately 17.52% and 19.91%. The inverse of the slopes in the short and open circuit conditions did also decrease with increasing T. Both current and voltage at the maximum power point decreased with the rise in T, whereas J ph appeared to increase linearly with temperature (5.84% and 3.51% at 10 and 15 suns, respectively). The value of R sh decreased linearly with T under both illumination intensities (20.42% at 10 suns and 23.73% at 15 suns), while R s showed an exponential decrease with increasing T (15.38% at 10 suns and 17.73% at 15 suns). The diode ideality factor decreased with T (13.36% at 10 suns and 12.41% at 15 suns); in contrast, J 0 increased with the rise in temperature. The losses resulting from the series resistance and surface charge recombination were reduced with the increase in temperature, whereas the losses caused by the shunt resistance and the reverse saturation current increased. The reverse saturation current density was increased by 3583% and 5988% under the 10 and 15 suns illumination levels, respectively.

Effect of light intensity on the performance of silicon solar cell

Global Journal of Pure and Applied Sciences

This work, presents the intense light effect on electrical parameters of silicon solar such as short circuit current, open circuit voltage, series and shunt resistances, maximum power, conversion efficiency, fill factor. After the resolution of the continuity equation which leads to the solar cell photocurrent and photovoltage expressions, we use the J/V characteristic to determine the solar cell series and shunt resistances. The maximum electric power of the solar cell is determined using the curves of electric power versus junction dynamic velocity, and then, the fill factor and conversion efficiency are calculated. Light concentration and junction dynamic velocity effects on solar cell short circuit current, open circuit voltage, series and shunt resistances, electric power, fill factor and conversion efficiency are also studied. The study proved that with increase of illumination light intensity, the solar cell shunt resistances decreases whereas series resistance, short circuit current, open circuit voltage, electric power, fill factor and conversion efficiency increases.

Intensity dependency of photovoltaic cell parameters under high illumination conditions: An analysis

Dependency of PV cell parameters on P in has been investigated under high illumination condition. The PV cell parameters analytically determined using single J-V curve. The analytically predicted values of R sh and R s decreased with increases of P in . However, n and J 0 increased with increasing P in . Theoretical values of parameters matched excellently with the experimental values. a b s t r a c t Previously, an analytical method was developed to extract the photovoltaic (PV) cell parameters, such as the shunt resistance, R sh , series resistance, R s , diode ideality factor, n, and reverse saturation current density, J 0 , through the use of the single current density-voltage (J-V) characteristics under high illumination conditions. Accurate knowledge of the PV cell parameters under different illumination conditions is of vital importance to PV design and performance. Although several attempts have been made to examine http://dx.Intensity of illumination Single diode model High illumination conditions the dependency of the PV cell parameters on the illumination intensity P in , there are no reports on the dependence of the PV cell parameters on P in under high illumination conditions. In this regards, dependency of the analytically-predicted PV cell parameters on P in of Si solar cells with various structures has been investigated. The analytically-predicted values of R sh and R s decreased with increasing P in . The rate of change in R sh , however, was higher than that of R s . The decrease in R sh may be due to light induced degradation of PV cells. The decrease in R s values might be due to an increase in the conductivity of the active region. On the other hand, n and J 0 increased with increasing P in . This increase in n and J 0 might have a savior effect, reducing the curve factor CF and hence the performance of the PV cell. The rate change in all PV cell parameters was higher at lower P in values than at the higher P in values. The theoretically computed values of the open circuit voltage V oc , curve factor CF and efficiency g using this method showed good agreement with the experimentally measured values at various P in . The performance of the PV systems is dependent on the product of the J sc , V oc and CF. Therefore, it is important to determine the optimal value of P in to achieve the maximum output power (minimum losses due to R sh , R s , n and J 0 ) from a PV system. By doing so, the cost per peak watt of solar energy can be minimized by enhancing the performance of PV systems.

Effect of light intensity on performance of silicon-based thin film solar cells

2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009

The e↵ect of light di↵useness on the outdoor performance of thin film solar cells

2017

Thin film solar cells are claimed to have a higher performance ratio under some light conditions, such as di↵use or low light. In order to investigate whether di↵useness could be a cause for a higher performance ratio of thin film solar cells, we measure the performance of six types of solar cells, while also measuring the irradiance and di↵useness. To measure di↵useness, we developed a cubic illuminance meter and compared its performance with a conventional sun tracker. The di↵useness metric of the cubic illuminance meter correlated with the sun tracker with an R2 of 0.57 and a p-value of 3.25 ⇤ 10 26 for the slope of the correlation. An additional advantage of the cube is that it never erroneously exceeds 100% di↵useness. The di↵useness metrics of the cube also had clear correlations with irradiance and temperature, as expected. When selecting the data for small ranges of temperature and irradiance in order to minimize the chance of a spurious relationship, we find that di↵useness...

Temperature dependence of solar cell performance—an analysis

Solar Energy Materials and Solar Cells, 2012

This paper investigates, theoretically, the temperature dependence of the performance of solar cells in the temperature range 273-523 K. The solar cell performance is determined by its parameters, viz., short circuit current density (J sc), open circuit voltage (V oc), fill factor (FF) and efficiency (Z). Solar cells based on semiconductor materials such as Ge, Si, GaAs, InP, CdTe and CdS are considered here. Reverse saturation current density (J o) is an important diode parameter which controls the change in performance parameters with temperature. In this work, reverse saturation current density (J o ¼ C.T 3 .exp (À qE g /kT)) is determined for three cases. Cases (I) and (II) correspond to C ¼ 17.90 and 50 mA cm À 2 K 3 respectively, whereas, case (III) corresponds to C.T 3 ¼ A¼ 1.5 Â 10 8 mA cm À 2. The maximum achievable V oc , J sc , FF and Z of solar cells are calculated for AM1.5G and AM0 spectra and are compared with theoretical and experimental results in the literature. Highest V oc , FF and Z are achieved for case (III). The performance of cells for case (III) gives the best agreement between the calculated and available theoretical and experimental data for solar cells based on the materials, Si, Ge, GaAs whereas, for InP, CdTe and CdS, case (I) seems to be more appropriate at 298 K. Moreover, as temperature changes, cases (I) and (II) are more suitable to describe the performance of solar cells. The rate of change of performance parameters with temperature, viz., dJ sc /dT, dV oc /dT, dFF/dT and dZ/dT are calculated and compared with the available data in the literature. In addition to theoretical results, the experimentally determined performance parameters of silicon solar cells and their rate of change with temperature are also presented.

Performance of amorphous and microcrystalline silicon pin solar cells under variable light intensity (original) (raw)

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