Monitoring low-coverage surface chemistry with bulk transport: NO2 dissociation and oxygen penetration at a GaAs(110) surface (original) (raw)

Phys. Rev. B, 1990

Abstract

We report an example of the effects of surface chemistry on bulk electronic properties. We study the dissociative adsorption of NO2 on a high-resistance GaAs(110) crystal surface. We show that the dissociation can be accurately followed with high sensitivity by monitoring the sample conductance. We use infrared spectroscopy, He specular scattering, and Auger spectroscopy, to specify the chemical processes involved.

Charles Bahr hasn't uploaded this paper.

Let Charles know you want this paper to be uploaded.

Ask for this paper to be uploaded.