Gettering effect in grain boundaries of multi-crystalline silicon (original) (raw)

This research investigates the gettering effect in multi-crystalline silicon (mc-Si) grain boundaries (GBs), focusing on three different gettering procedures: aluminum deposition, porous silicon (PS) employment, and grooving for surface damage. It emphasizes the influence of rapid thermal annealing on defect density, potential barriers at GBs, and the overall electrical activity, including varied defect densities at different annealing temperatures. The findings reveal how these methods can significantly impact the optoelectronic properties of mc-Si, contributing to improved efficiency in solar cell applications.