Optimal Design of Nanoscale Triple-Gate Devices (original) (raw)

2006 IEEE international SOI Conferencee Proceedings, 2006

Abstract

The impacts of corner rounding in TG MOSFETs on DIBL and device characteristics were analyzed via 3D numerical simulations. Properly rounded corners of TG device can improve SCEs or increase drive current. Semi-cylindrical gate structure is preferable for heavily-doped devices, while rectangular gate structure appears better for lightly-doped devices, respectively

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